Inventor
SINHA ASHOK K
US47 patents
⚠️ This page may combine multiple inventors who share the name “SINHA ASHOK K”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
30 patentsUS6451177B1Sep 17, 2002
Vault shaped target and magnetron operable in two sputtering modes
APPLIED MATERIALS INC103 citations99
US6258223B1Jul 10, 2001
In-situ electroless copper seed layer enhancement in an electroplating system
APPLIED MATERIALS INC399 citations99
US5516367AMay 14, 1996
Chemical vapor deposition chamber with a purge guide
APPLIED MATERIALS INC397 citations99
US6939804B2Sep 6, 2005
Formation of composite tungsten films
APPLIED MATERIALS INC116 citations98
US6503375B1Jan 7, 2003
Electroplating apparatus using a perforated phosphorus doped consumable anode
APPLIED MATERIALS INC93 citations98
US6436267B1Aug 20, 2002
Method for achieving copper fill of high aspect ratio interconnect features
APPLIED MATERIALS INC105 citations98
US6277249B1Aug 21, 2001
Integrated process for copper via filling using a magnetron and target producing highly energetic ions
APPLIED MATERIALS INC273 citations98
US6274008B1Aug 14, 2001
Integrated process for copper via filling
APPLIED MATERIALS INC231 citations98
US6258220B1Jul 10, 2001
Electro-chemical deposition system
APPLIED MATERIALS INC443 citations98
US6170428B1Jan 9, 2001
Symmetric tunable inductively coupled HDP-CVD reactor
APPLIED MATERIALS INC430 citations98
US6109206AAug 29, 2000
Remote plasma source for chamber cleaning
APPLIED MATERIALS INC138 citations98
US6890850B2May 10, 2005
Method of depositing dielectric materials in damascene applications
APPLIED MATERIALS INC92 citations97
US6991709B2Jan 31, 2006
Multi-step magnetron sputtering process
APPLIED MATERIALS INC46 citations96
US6787006B2Sep 7, 2004
Operating a magnetron sputter reactor in two modes
APPLIED MATERIALS INC53 citations96
US6485618B2Nov 26, 2002
Integrated copper fill process
APPLIED MATERIALS INC47 citations96
US6290865B1Sep 18, 2001
Spin-rinse-drying process for electroplated semiconductor wafers
APPLIED MATERIALS INC77 citations96
US5421401AJun 6, 1995
Compound clamp ring for semiconductor wafers
APPLIED MATERIALS INC69 citations96
US5292554AMar 8, 1994
Deposition apparatus using a perforated pumping plate
APPLIED MATERIALS INC81 citations96
US7605083B2Oct 20, 2009
Formation of composite tungsten films
APPLIED MATERIALS INC39 citations95
US6635157B2Oct 21, 2003
Electro-chemical deposition system
APPLIED MATERIALS INC43 citations95
US6372633B1Apr 16, 2002
Method and apparatus for forming metal interconnects
APPLIED MATERIALS INC58 citations95
US6103014AAug 15, 2000
Chemical vapor deposition chamber
APPLIED MATERIALS INC62 citations95
US5935338AAug 10, 1999
Chemical vapor deposition chamber
APPLIED MATERIALS INC63 citations95
US5476548ADec 19, 1995
Reducing backside deposition in a substrate processing apparatus through the use of a shadow ring
APPLIED MATERIALS INC92 citations95
US7384867B2Jun 10, 2008
Formation of composite tungsten films
APPLIED MATERIALS INC16 citations92
US6905737B2Jun 14, 2005
Method of delivering activated species for rapid cyclical deposition
APPLIED MATERIALS INC47 citations90
US7276447B1Oct 2, 2007
Plasma dielectric etch process including ex-situ backside polymer removal for low-dielectric constant material
APPLIED MATERIALS INC24 citations89
US7312146B2Dec 25, 2007
Semiconductor device interconnect fabricating techniques
APPLIED MATERIALS INC16 citations84
US7497932B2Mar 3, 2009
Electro-chemical deposition system
APPLIED MATERIALS INC9 citations82
US7151053B2Dec 19, 2006
Method of depositing dielectric materials including oxygen-doped silicon carbide in damascene applications
APPLIED MATERIALS INC8 citations73
BELL TELEPHONE LABOR INC
9 patentsUS4378628AApr 5, 1983
Cobalt silicide metallization for semiconductor integrated circuits
BELL TELEPHONE LABOR INC105 citations96
US4276557AJun 30, 1981
Integrated semiconductor circuit structure and method for making it
BELL TELEPHONE LABOR INC59 citations96
US4151007AApr 24, 1979
Hydrogen annealing process for stabilizing metal-oxide-semiconductor structures
BELL TELEPHONE LABOR INC51 citations96
US4332839AJun 1, 1982
Method for making integrated semiconductor circuit structure with formation of Ti or Ta silicide
BELL TELEPHONE LABOR INC30 citations92
US4438450AMar 20, 1984
Solid state device with conductors having chain-shaped grain structure
BELL TELEPHONE LABOR INC27 citations91
US4142004AFeb 27, 1979
Method of coating semiconductor substrates
BELL TELEPHONE LABOR INC127 citations91
US4240196ADec 23, 1980
Fabrication of two-level polysilicon devices
BELL TELEPHONE LABOR INC33 citations89
US4364779ADec 21, 1982
Fabrication of semiconductor devices including double annealing steps for radiation hardening
BELL TELEPHONE LABOR INC24 citations81
US4171489AOct 16, 1979
Radiation mask structure
BELL TELEPHONE LABOR INC27 citations81
AT & T BELL LAB
3 patentsUS4589928AMay 20, 1986
Method of making semiconductor integrated circuits having backside gettered with phosphorus
AT & T BELL LAB74 citations92
US4985373AJan 15, 1991
Multiple insulating layer for two-level interconnected metallization in semiconductor integrated circuit structures
AT & T BELL LAB14 citations69
US5356659AOct 18, 1994
Metallization for semiconductor devices
AT & T BELL LAB9 citations67