P

Inventor

HUANG SHAO-CHANG

TW61 patents
⚠️ This page may combine multiple inventors who share the name “HUANG SHAO-CHANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

VANGUARD INT SEMICONDUCT CORP

25 patents
US10523002B2Dec 31, 2019

Electrostatic discharge protection circuit

VANGUARD INT SEMICONDUCT CORP7 citations83
US11652477B2May 16, 2023

Voltage tracking circuits and electronic circuits

VANGUARD INT SEMICONDUCT CORP4 citations74
US10643987B2May 5, 2020

Semiconductor structures

VANGUARD INT SEMICONDUCT CORP3 citations73
US10224282B2Mar 5, 2019

Protection device and operation system utilizing the same

VANGUARD INT SEMICONDUCT CORP4 citations73
US11476207B2Oct 18, 2022

Semiconductor device structure comprising source and drain protective circuits against electrostatic discharge (ESD)

VANGUARD INT SEMICONDUCT CORP2 citations72
US10867989B2Dec 15, 2020

Driving circuit having electrostatic discharge protection

VANGUARD INT SEMICONDUCT CORP4 citations72
US10177135B2Jan 8, 2019

Integrated circuit and electrostatic discharge protection circuit thereof

VANGUARD INT SEMICONDUCT CORP6 citations72
US10056897B1Aug 21, 2018

Power-on control circuit with state-recovery mechanism and operating circuit utilizing the same

VANGUARD INT SEMICONDUCT CORP3 citations72
US11569657B1Jan 31, 2023

Protection circuits

VANGUARD INT SEMICONDUCT CORP3 citations71
US11121212B1Sep 14, 2021

High-voltage semiconductor device

VANGUARD INT SEMICONDUCT CORP2 citations71
US11088541B2Aug 10, 2021

Integrated circuit and electrostatic discharge protection circuit thereof

VANGUARD INT SEMICONDUCT CORP2 citations69
US12334920B2Jun 17, 2025

Level shifter

VANGUARD INT SEMICONDUCT CORP1 citations62
US12107415B2Oct 1, 2024

Electrostatic discharge protection circuit and electronic circuit

VANGUARD INT SEMICONDUCT CORP0 citations62
US12444935B2Oct 14, 2025

Electrostatic discharge protection circuit

VANGUARD INT SEMICONDUCT CORP0 citations61
US11810872B2Nov 7, 2023

Semiconductor device structure comprising source and drain protective circuits against electrostatic discharge (ESD)

VANGUARD INT SEMICONDUCT CORP1 citations61
US11811222B2Nov 7, 2023

Electrostatic discharge protection circuit

VANGUARD INT SEMICONDUCT CORP0 citations61
US11043486B2Jun 22, 2021

ESD protection devices

VANGUARD INT SEMICONDUCT CORP0 citations61
US11894430B2Feb 6, 2024

Semiconductor structure

VANGUARD INT SEMICONDUCT CORP0 citations52
US11196249B2Dec 7, 2021

Electrostatic discharge (ESD) blocking circuit

VANGUARD INT SEMICONDUCT CORP0 citations52
US11527884B2Dec 13, 2022

Protection circuit

VANGUARD INT SEMICONDUCT CORP0 citations51
US10164627B1Dec 25, 2018

Power-on control circuit

VANGUARD INT SEMICONDUCT CORP1 citations51
US12500410B2Dec 16, 2025

Driving circuit

VANGUARD INT SEMICONDUCT CORP0 citations50
US11940828B2Mar 26, 2024

Voltage tracking circuits with low power consumption and electronic circuits using the same

VANGUARD INT SEMICONDUCT CORP0 citations50
US11387649B2Jul 12, 2022

Operating circuit having ESD protection function

VANGUARD INT SEMICONDUCT CORP0 citations50
US12419115B2Sep 16, 2025

Electrostatic discharge protection circuit

VANGUARD INT SEMICONDUCT CORP0 citations49

TAIWAN SEMICONDUCTOR MFG

14 patents
US7271988B2Sep 18, 2007

Method and system to protect electrical fuses

TAIWAN SEMICONDUCTOR MFG17 citations92
US7411767B2Aug 12, 2008

Multi-domain ESD protection circuit structure

TAIWAN SEMICONDUCTOR MFG42 citations91
US7663851B2Feb 16, 2010

Tie-off circuit with ESD protection features

TAIWAN SEMICONDUCTOR MFG11 citations84
US7420250B2Sep 2, 2008

Electrostatic discharge protection device having light doped regions

TAIWAN SEMICONDUCTOR MFG14 citations84
US7405445B2Jul 29, 2008

Semiconductor structure and method for ESD protection

TAIWAN SEMICONDUCTOR MFG13 citations84
US7166876B2Jan 23, 2007

MOSFET with electrostatic discharge protection structure and method of fabrication

TAIWAN SEMICONDUCTOR MFG14 citations84
US7323752B2Jan 29, 2008

ESD protection circuit with floating diffusion regions

TAIWAN SEMICONDUCTOR MFG16 citations83
US7002216B2Feb 21, 2006

ESD performance using separate diode groups

TAIWAN SEMICONDUCTOR MFG10 citations74
US7453122B2Nov 18, 2008

SOI MOSFET device with reduced polysilicon loading on active area

TAIWAN SEMICONDUCTOR MFG5 citations63
US7420793B2Sep 2, 2008

Circuit system for protecting thin dielectric devices from ESD induced damages

TAIWAN SEMICONDUCTOR MFG4 citations63
US7291888B2Nov 6, 2007

ESD protection circuit using a transistor chain

TAIWAN SEMICONDUCTOR MFG5 citations63
US7616416B2Nov 10, 2009

System to protect electrical fuses

TAIWAN SEMICONDUCTOR MFG4 citations62
US7217984B2May 15, 2007

Divided drain implant for improved CMOS ESD performance

TAIWAN SEMICONDUCTOR MFG4 citations60
US7723787B2May 25, 2010

SOI MOSFET device with reduced polysilicon loading on active area

TAIWAN SEMICONDUCTOR MFG0 citations52

UNITED MICROELECTRONICS CORP

5 patents

EMEMORY TECHNOLOGY INC

4 patents

HUANG SHAO-CHANG

1 patent

LAI TSUNG-MU

1 patent

Showing the top 50 of 61 patents by PatentIndex Score.