Inventor

HORI TSUTOMU

JP35 patents

⚠️ This page may combine multiple inventors who share the name “HORI TSUTOMU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HORI TSUTOMU

SUMITOMO ELECTRIC INDUSTRIES

Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device

Method of manufacturing silicon carbide single crystal

Method of manufacturing silicon carbide single crystal

Ingot, silicon carbide substrate, and method for producing ingot

Silicon carbide single crystal substrate, silicon carbide epitaxial substrate, and method of manufacturing silicon carbide semiconductor device

Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor device

Method for producing single crystal

Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device

Silicon carbide single crystal substrate, silicon carbide epitaxial substrate, and method of manufacturing silicon carbide semiconductor device

Silicon carbide ingot and method for manufacturing silicon carbide substrate

Method of manufacturing silicon carbide epitaxial substrate

Silicon carbide epitaxial substrate and silicon carbide semiconductor device

Silicon carbide epitaxial wafer

Method of manufacturing a silicon carbide epitaxial substrate

Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device

Crystal growth apparatus, method for manufacturing silicon carbide single crystal, silicon carbide single crystal substrate, and silicon carbide epitaxial substrate

Silicon carbide epitaxial substrate

Method for manufacturing silicon carbide single crystal

Silicon carbide single crystal substrate, silicon carbide epitaxial substrate, and method of manufacturing silicon carbide semiconductor device

Method for manufacturing silicon carbide single crystal

Method for manufacturing silicon carbide single crystal

Method of manufacturing silicon carbide single crystal and silicon carbide single crystal substrate

Method of manufacturing silicon carbide single crystal and silicon carbide single crystal substrate

Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor device

Crystal growth apparatus, method for manufacturing silicon carbide single crystal, silicon carbide single crystal substrate, and silicon carbide epitaxial substrate

Method of manufacturing silicon carbide substrate

Silicon carbide substrate

Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor device

Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device

Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device

Device of manufacturing silicon carbide single crystal

Silicon carbide epitaxial substrate and method for manufacturing a silicon carbide semiconductor device

Method for producing single crystal

HORI TSUTOMU

Single crystal silicon carbide substrate and method of manufacturing the same

Silicon carbide crystal ingot, silicon carbide crystal wafer, and method for fabricating silicon carbide crystal ingot