Inventor
MIYASE TAKAYA
JP10 patents
Patents
10 patentsUS11735415B2Aug 22, 2023
Method for manufacturing silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device
SUMITOMO ELECTRIC INDUSTRIES2 citations71
US12125881B2Oct 22, 2024
Silicon carbide epitaxial substrate and silicon carbide semiconductor device
SUMITOMO ELECTRIC INDUSTRIES1 citations61
US11459670B2Oct 4, 2022
Silicon carbide epitaxial wafer
SUMITOMO ELECTRIC INDUSTRIES0 citations61
US12176399B2Dec 24, 2024
Method of manufacturing a silicon carbide epitaxial substrate
SUMITOMO ELECTRIC INDUSTRIES0 citations60
US12020927B2Jun 25, 2024
Method for manufacturing silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device
SUMITOMO ELECTRIC INDUSTRIES0 citations50
US12020924B2Jun 25, 2024
Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor device
SUMITOMO ELECTRIC INDUSTRIES0 citations50
US12516443B2Jan 6, 2026
Silicon carbide epitaxial substrate
SUMITOMO ELECTRIC INDUSTRIES0 citations48
US12428752B2Sep 30, 2025
Silicon carbide epitaxial substrate
SUMITOMO ELECTRIC INDUSTRIES0 citations44
US12575152B2Mar 10, 2026
Silicon carbide epitaxial substrate and silicon carbide semiconductor device
SUMITOMO ELECTRIC INDUSTRIES0 citations43
US10526699B2Jan 7, 2020
Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device
SUMITOMO ELECTRIC INDUSTRIES0 citations38