P

Inventor

HONKE TSUBASA

JP19 patents
⚠️ This page may combine multiple inventors who share the name “HONKE TSUBASA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SUMITOMO ELECTRIC INDUSTRIES

18 patents
US11342418B2May 24, 2022

Silicon carbide substrate

SUMITOMO ELECTRIC INDUSTRIES3 citations72
US9896781B2Feb 20, 2018

Silicon carbide single-crystal substrate, silicon carbide epitaxial substrate and method of manufacturing them

SUMITOMO ELECTRIC INDUSTRIES2 citations72
US12104278B2Oct 1, 2024

Silicon carbide substrate

SUMITOMO ELECTRIC INDUSTRIES0 citations62
US12091772B2Sep 17, 2024

Silicon carbide substrate

SUMITOMO ELECTRIC INDUSTRIES0 citations62
US12071708B2Aug 27, 2024

Silicon carbide substrate

SUMITOMO ELECTRIC INDUSTRIES0 citations62
US11862684B2Jan 2, 2024

Recycle wafer of silicon carbide and method for manufacturing silicon carbide semiconductor device

SUMITOMO ELECTRIC INDUSTRIES0 citations62
US11322349B2May 3, 2022

Silicon carbide substrate and silicon carbide epitaxial substrate

SUMITOMO ELECTRIC INDUSTRIES1 citations62
US10427324B2Oct 1, 2019

Silicon carbide ingot and method for manufacturing silicon carbide substrate

SUMITOMO ELECTRIC INDUSTRIES1 citations62
US11913135B2Feb 27, 2024

Silicon carbide substrate and method of manufacturing silicon carbide substrate

SUMITOMO ELECTRIC INDUSTRIES0 citations61
US11459670B2Oct 4, 2022

Silicon carbide epitaxial wafer

SUMITOMO ELECTRIC INDUSTRIES0 citations61
US8859387B2Oct 14, 2014

Method for manufacturing silicon carbide semiconductor device

SUMITOMO ELECTRIC INDUSTRIES3 citations53
US10221501B2Mar 5, 2019

Silicon carbide substrate

SUMITOMO ELECTRIC INDUSTRIES0 citations51
US10030319B2Jul 24, 2018

Silicon carbide substrate, method for producing same, and method for manufacturing silicon carbide semiconductor device

SUMITOMO ELECTRIC INDUSTRIES0 citations51
US9799735B2Oct 24, 2017

Method of manufacturing silicon carbide single crystal and silicon carbide single crystal substrate

SUMITOMO ELECTRIC INDUSTRIES0 citations51
US9290860B2Mar 22, 2016

Method of manufacturing silicon carbide single crystal and silicon carbide single crystal substrate

SUMITOMO ELECTRIC INDUSTRIES1 citations51
US10872759B2Dec 22, 2020

Silicon carbide single crystal substrate and method for manufacturing the same

SUMITOMO ELECTRIC INDUSTRIES0 citations41
US9978651B2May 22, 2018

Silicon carbide single crystal substrate, silicon carbide semiconductor device, and method for manufacturing silicon carbide semiconductor device

SUMITOMO ELECTRIC INDUSTRIES0 citations41
US10526699B2Jan 7, 2020

Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device

SUMITOMO ELECTRIC INDUSTRIES0 citations38

HARADA SHIN

1 patent