P

Inventor

OKITA KYOKO

JP35 patents
⚠️ This page may combine multiple inventors who share the name “OKITA KYOKO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SUMITOMO ELECTRIC INDUSTRIES

29 patents
US8975643B2Mar 10, 2015

Silicon carbide single-crystal substrate and method for manufacturing same

SUMITOMO ELECTRIC INDUSTRIES9 citations84
US11034058B2Jun 15, 2021

Method for manufacturing silicon carbide substrate, method for manufacturing silicon carbide epitaxial substrate, and method for manufacturing silicon carbide semiconductor device

SUMITOMO ELECTRIC INDUSTRIES2 citations73
US11342418B2May 24, 2022

Silicon carbide substrate

SUMITOMO ELECTRIC INDUSTRIES3 citations72
US9896781B2Feb 20, 2018

Silicon carbide single-crystal substrate, silicon carbide epitaxial substrate and method of manufacturing them

SUMITOMO ELECTRIC INDUSTRIES2 citations72
US9966249B2May 8, 2018

Silicon carbide semiconductor substrate and method for manufacturing same

SUMITOMO ELECTRIC INDUSTRIES3 citations71
US12104278B2Oct 1, 2024

Silicon carbide substrate

SUMITOMO ELECTRIC INDUSTRIES0 citations62
US12091772B2Sep 17, 2024

Silicon carbide substrate

SUMITOMO ELECTRIC INDUSTRIES0 citations62
US12071708B2Aug 27, 2024

Silicon carbide substrate

SUMITOMO ELECTRIC INDUSTRIES0 citations62
US11862684B2Jan 2, 2024

Recycle wafer of silicon carbide and method for manufacturing silicon carbide semiconductor device

SUMITOMO ELECTRIC INDUSTRIES0 citations62
US11322349B2May 3, 2022

Silicon carbide substrate and silicon carbide epitaxial substrate

SUMITOMO ELECTRIC INDUSTRIES1 citations62
US11913135B2Feb 27, 2024

Silicon carbide substrate and method of manufacturing silicon carbide substrate

SUMITOMO ELECTRIC INDUSTRIES0 citations61
US11459670B2Oct 4, 2022

Silicon carbide epitaxial wafer

SUMITOMO ELECTRIC INDUSTRIES0 citations61
US11781246B2Oct 10, 2023

Silicon carbide single crystal substrate

SUMITOMO ELECTRIC INDUSTRIES0 citations59
US11535953B2Dec 27, 2022

Silicon carbide single crystal substrate

SUMITOMO ELECTRIC INDUSTRIES1 citations59
US7737043B2Jun 15, 2010

Inspection method of compound semiconductor substrate, compound semiconductor substrate, surface treatment method of compound semiconductor substrate, and method of producing compound semiconductor crystal

SUMITOMO ELECTRIC INDUSTRIES5 citations59
US10741683B2Aug 11, 2020

Semiconductor device and method for manufacturing same

SUMITOMO ELECTRIC INDUSTRIES0 citations52
US10704163B2Jul 7, 2020

Silicon carbide substrate and method for manufacturing the same

SUMITOMO ELECTRIC INDUSTRIES0 citations52
US10113249B2Oct 30, 2018

Silicon carbide substrate and method for manufacturing the same

SUMITOMO ELECTRIC INDUSTRIES0 citations52
US9844893B2Dec 19, 2017

Method of manufacturing silicon carbide substrate

SUMITOMO ELECTRIC INDUSTRIES0 citations52
US9324814B2Apr 26, 2016

Silicon carbide single-crystal substrate

SUMITOMO ELECTRIC INDUSTRIES0 citations52
US9318563B2Apr 19, 2016

Silicon carbide single-crystal substrate

SUMITOMO ELECTRIC INDUSTRIES0 citations52
US10319821B2Jun 11, 2019

Silicon carbide substrate

SUMITOMO ELECTRIC INDUSTRIES0 citations51
US10221501B2Mar 5, 2019

Silicon carbide substrate

SUMITOMO ELECTRIC INDUSTRIES0 citations51
US10030319B2Jul 24, 2018

Silicon carbide substrate, method for producing same, and method for manufacturing silicon carbide semiconductor device

SUMITOMO ELECTRIC INDUSTRIES0 citations51
US9799735B2Oct 24, 2017

Method of manufacturing silicon carbide single crystal and silicon carbide single crystal substrate

SUMITOMO ELECTRIC INDUSTRIES0 citations51
US9691608B2Jun 27, 2017

Silicon carbide substrate, silicon carbide semiconductor device, and methods for manufacturing silicon carbide substrate and silicon carbide semiconductor device

SUMITOMO ELECTRIC INDUSTRIES1 citations51
US9290860B2Mar 22, 2016

Method of manufacturing silicon carbide single crystal and silicon carbide single crystal substrate

SUMITOMO ELECTRIC INDUSTRIES1 citations51
US10872759B2Dec 22, 2020

Silicon carbide single crystal substrate and method for manufacturing the same

SUMITOMO ELECTRIC INDUSTRIES0 citations41
US9978651B2May 22, 2018

Silicon carbide single crystal substrate, silicon carbide semiconductor device, and method for manufacturing silicon carbide semiconductor device

SUMITOMO ELECTRIC INDUSTRIES0 citations41

NISHIGUCHI TARO

2 patents

OKITA KYOKO

2 patents

HARADA SHIN

1 patent

SASAKI MAKOTO

1 patent