Inventor

OGUZ KAAN

US100 patents

⚠️ This page may combine multiple inventors who share the name “OGUZ KAAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

OGUZ KAAN

INTEL CORP

Balancing energy barrier between states in perpendicular magnetic tunnel junctions

Spin-transfer torque memory (STTM) devices having magnetic contacts

Techniques for forming spin-transfer torque memory having a dot-contacted free magnetic layer

Transition metal dichalcogenide based spin orbit torque memory device

Spin orbit torque memory devices and methods of fabrication

Spin orbit memory devices with reduced magnetic moment and methods of fabrication

Perpendicular exchange bias with antiferromagnet for spin orbit coupling based memory

Perpendicular spin transfer torque memory (pSTTM) devices with enhanced thermal stability and methods to form the same

Magnetically doped spin orbit torque electrode for perpendicular magnetic random access memory

Transition metal dichalcogenide based spin orbit torque memory device

Multi-level magnetic tunnel junction (MTJ) devices including mobile magnetic skyrmions or ferromagnetic domains

Multi-layer spin orbit torque electrodes for perpendicular magnetic random access memory

Nano-rod spin orbit coupling based magnetic random access memory with shape induced perpendicular magnetic anisotropy

High blocking temperature spin orbit torque electrode

Transition metal dichalcogenide based magnetoelectric memory device

Self-aligned spin orbit torque (SOT) memory devices and their methods of fabrication

Low stray field magnetic memory

Perpendicular magnetic memory with symmetric fixed layers

Spin-transfer torque memory (STTM) devices having magnetic contacts

Electrical contacts for magnetoresistive random access memory devices

PSTTM device with bottom electrode interface material

PSTTM device with multi-layered filter stack

Techniques for forming spin-transfer torque memory (STTM) elements having annular contacts

High stability spintronic memory

Perpendicular MTJ stacks with magnetic anisotrophy enhancing layer and crystallization barrier layer

Perpendicular spin transfer torque memory (STTM) device having offset cells and method to form same

High stability spintronic memory

Perpendicular spin transfer torque memory (pSTTM) devices with enhanced stability and method to form same

Spin orbit torque memory devices and methods of fabrication

Spin orbit torque memory devices and methods of fabrication

Spin orbit torque (SOT) memory devices and their methods of fabrication

Texture breaking layer to decouple bottom electrode from PMTJ device

Ferroelectric field-effect transistor devices having a top gate and a bottom gate

Capacitor with dual dielectric layers

Antiferromagnet based spin orbit torque memory device

Perpendicular STTM multi-layer insert free layer

Perpendicular magnetic memory with reduced switching current

Unipolar current switching in perpendicular magnetic tunnel junction (pMTJ) devices through reduced bipolar coercivity

Perpendicular magnetic memory with filament conduction path

Memory comprising conductive ferroelectric material in series with dielectric material

Capacitor with an electrically conductive layer coupled with a metal layer of the capacitor

ESD protection decoupled from diffusion

Capacitors with built-in electric fields

DOYLE BRIAN S

Perpendicular spin transfer torque memory (STTM) device with enhanced stability and method to form same

Perpendicular spin transfer torque memory (STTM) device with enhanced stability and method to form same

Perpendicular spin transfer torque memory (STTM) device having offset cells and method to form same

Memory cells with enhanced tunneling magnetoresistance ratio, memory devices and systems including the same

OGUZ KAAN

Perpendicular MTJ stacks with magnetic anisotropy enhancing layer and crystallization barrier layer

Perpendicular MTJ stacks with magnetic anisotropy enhancing layer and crystallization barrier layer

MUKHERJEE NILOY

Resistive memory cells and precursors thereof, methods of making the same, and devices including the same