Inventor
KIM BYUNG YOON
US22 patents
⚠️ This page may combine multiple inventors who share the name “KIM BYUNG YOON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
12 patentsUS11342218B1May 24, 2022
Single crystalline silicon stack formation and bonding to a CMOS wafer
MICRON TECHNOLOGY INC4 citations73
US11631681B2Apr 18, 2023
Vertical contacts for semiconductor devices
MICRON TECHNOLOGY INC2 citations72
US12224201B2Feb 11, 2025
Single crystalline silicon stack formation and bonding to a cmos wafer
MICRON TECHNOLOGY INC0 citations62
US12063797B2Aug 13, 2024
Buried connection line for peripheral area of a memory device
MICRON TECHNOLOGY INC0 citations62
US12052858B2Jul 30, 2024
Vertical contacts for semiconductor devices
MICRON TECHNOLOGY INC0 citations62
US11869803B2Jan 9, 2024
Single crystalline silicon stack formation and bonding to a CMOS wafer
MICRON TECHNOLOGY INC0 citations62
US11791260B2Oct 17, 2023
Contacts for twisted conductive lines within memory arrays
MICRON TECHNOLOGY INC1 citations62
US11152375B2Oct 19, 2021
Contact patterning
MICRON TECHNOLOGY INC0 citations62
US11903183B2Feb 13, 2024
Conductive line contact regions having multiple multi-direction conductive lines and staircase conductive line contact structures for semiconductor devices
MICRON TECHNOLOGY INC0 citations59
US12199094B2Jan 14, 2025
Apparatuses including Finfets having different gate oxide configurations, and related computing systems
MICRON TECHNOLOGY INC0 citations58
US12274051B2Apr 8, 2025
Metal gate memory device and method
MICRON TECHNOLOGY INC0 citations54
US11696432B2Jul 4, 2023
Multi-direction conductive line and staircase contact for semiconductor devices
MICRON TECHNOLOGY INC0 citations49
SAMSUNG ELECTRONICS CO LTD
9 patentsUS6525398B1Feb 25, 2003
Semiconductor device capable of preventing moisture-absorption of fuse area thereof
SAMSUNG ELECTRONICS CO LTD44 citations92
US9871093B2Jan 16, 2018
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD8 citations84
US6984895B2Jan 10, 2006
Bonding pad structure of a semiconductor device
SAMSUNG ELECTRONICS CO LTD15 citations82
US7446043B2Nov 4, 2008
Contact structure having silicide layers, semiconductor device employing the same, and methods of fabricating the contact structure and semiconductor device
SAMSUNG ELECTRONICS CO LTD8 citations73
US5305259AApr 19, 1994
Power source voltage tracking circuit for stabilization of bit lines
SAMSUNG ELECTRONICS CO LTD13 citations73
US8026604B2Sep 27, 2011
Semiconductor devices having contact holes including protrusions exposing contact pads
SAMSUNG ELECTRONICS CO LTD4 citations62
US7517762B2Apr 14, 2009
Semiconductor device capable of preventing moisture-absorption of fuse area thereof and method for manufacturing the fuse area
SAMSUNG ELECTRONICS CO LTD4 citations62
US6867070B2Mar 15, 2005
Bonding pad structure of a semiconductor device and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD5 citations60
US6913953B2Jul 5, 2005
Semiconductor device capable of preventing moisture absorption of fuse area thereof and method for manufacturing the fuse area
SAMSUNG ELECTRONICS CO LTD0 citations51