P

Inventor

JANG SE-MYEONG

KR34 patents
⚠️ This page may combine multiple inventors who share the name “JANG SE-MYEONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

28 patents
US6458653B1Oct 1, 2002

Method for forming lower electrode of cylinder-shaped capacitor preventing twin bit failure

SAMSUNG ELECTRONICS CO LTD100 citations98
US7223649B2May 29, 2007

Method of fabricating transistor of DRAM semiconductor device

SAMSUNG ELECTRONICS CO LTD59 citations97
US7728381B2Jun 1, 2010

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD18 citations92
US8928073B2Jan 6, 2015

Semiconductor devices including guard ring structures

SAMSUNG ELECTRONICS CO LTD8 citations84
US7655988B2Feb 2, 2010

Method of manufacturing multi-channel transistor device and multi-channel transistor device manufactured using the method

SAMSUNG ELECTRONICS CO LTD8 citations84
US9634012B2Apr 25, 2017

Method of forming active patterns, active pattern array, and method of manufacturing a semiconductor device

SAMSUNG ELECTRONICS CO LTD15 citations83
US7592686B2Sep 22, 2009

Semiconductor device having a junction extended by a selective epitaxial growth (SEG) layer and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD13 citations83
US7586150B2Sep 8, 2009

Semiconductor devices with local recess channel transistors and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD7 citations74
US6656790B2Dec 2, 2003

Method for manufacturing a semiconductor device including storage nodes of capacitor

SAMSUNG ELECTRONICS CO LTD9 citations74
US9972527B2May 15, 2018

Semiconductor device including air spacer

SAMSUNG ELECTRONICS CO LTD4 citations73
US7952140B2May 31, 2011

Methods of fabricating semiconductor devices having multiple channel transistors and semiconductor devices fabricated thereby

SAMSUNG ELECTRONICS CO LTD6 citations73
US7803684B2Sep 28, 2010

Method of fabricating semiconductor device having a junction extended by a selective epitaxial growth (SEG) layer

SAMSUNG ELECTRONICS CO LTD6 citations73
US6974752B2Dec 13, 2005

Methods of fabricating integrated circuit devices having uniform silicide junctions

SAMSUNG ELECTRONICS CO LTD5 citations73
US8809993B2Aug 19, 2014

Semiconductor device having isolation region

SAMSUNG ELECTRONICS CO LTD4 citations69
US11355349B2Jun 7, 2022

Method of manufacturing semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations63
US7842572B2Nov 30, 2010

Methods of manufacturing semiconductor devices with local recess channel transistors

SAMSUNG ELECTRONICS CO LTD3 citations63
US7144798B2Dec 5, 2006

Semiconductor memory devices having extending contact pads and related methods

SAMSUNG ELECTRONICS CO LTD4 citations63
US8987907B2Mar 24, 2015

Semiconductor device

SAMSUNG ELECTRONICS CO LTD2 citations62
US7737512B2Jun 15, 2010

Integrated circuit devices having uniform silicide junctions

SAMSUNG ELECTRONICS CO LTD2 citations62
US7700445B2Apr 20, 2010

Method for fabricating multiple FETs of different types

SAMSUNG ELECTRONICS CO LTD2 citations62
US7691689B2Apr 6, 2010

Methods of fabricating semiconductor devices having multiple channel transistors and semiconductor devices fabricated thereby

SAMSUNG ELECTRONICS CO LTD4 citations62
US7329927B2Feb 12, 2008

Integrated circuit devices having uniform silicide junctions

SAMSUNG ELECTRONICS CO LTD1 citations62
US8008163B2Aug 30, 2011

Method of fabricating semiconductor device

SAMSUNG ELECTRONICS CO LTD6 citations60
US11676816B2Jun 13, 2023

Method of forming semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations52
US10867802B2Dec 15, 2020

Method of manufacturing semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations52
US7935600B2May 3, 2011

Method of manufacturing multi-channel transistor device and multi-channel transistor device manufactured using the method

SAMSUNG ELECTRONICS CO LTD0 citations52
US9536884B2Jan 3, 2017

Semiconductor device having positive fixed charge containing layer

SAMSUNG ELECTRONICS CO LTD1 citations51
US7833864B2Nov 16, 2010

Method of doping polysilicon layer that utilizes gate insulation layer to prevent diffusion of ion implanted impurities into underlying semiconductor substrate

SAMSUNG ELECTRONICS CO LTD0 citations51

KAHNG JAE-ROK

1 patent

SAMUNG ELECTRONICS CO LTD

1 patent

PARK JOO-SUNG

1 patent

KIM EUN-JUNG

1 patent

LEE JA-YOUNG

1 patent

JANG SE-MYEONG

1 patent