Inventor
JANG SE-MYEONG
KR34 patents
⚠️ This page may combine multiple inventors who share the name “JANG SE-MYEONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
28 patentsUS6458653B1Oct 1, 2002
Method for forming lower electrode of cylinder-shaped capacitor preventing twin bit failure
SAMSUNG ELECTRONICS CO LTD100 citations98
US7223649B2May 29, 2007
Method of fabricating transistor of DRAM semiconductor device
SAMSUNG ELECTRONICS CO LTD59 citations97
US7728381B2Jun 1, 2010
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD18 citations92
US8928073B2Jan 6, 2015
Semiconductor devices including guard ring structures
SAMSUNG ELECTRONICS CO LTD8 citations84
US7655988B2Feb 2, 2010
Method of manufacturing multi-channel transistor device and multi-channel transistor device manufactured using the method
SAMSUNG ELECTRONICS CO LTD8 citations84
US9634012B2Apr 25, 2017
Method of forming active patterns, active pattern array, and method of manufacturing a semiconductor device
SAMSUNG ELECTRONICS CO LTD15 citations83
US7592686B2Sep 22, 2009
Semiconductor device having a junction extended by a selective epitaxial growth (SEG) layer and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD13 citations83
US7586150B2Sep 8, 2009
Semiconductor devices with local recess channel transistors and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD7 citations74
US6656790B2Dec 2, 2003
Method for manufacturing a semiconductor device including storage nodes of capacitor
SAMSUNG ELECTRONICS CO LTD9 citations74
US9972527B2May 15, 2018
Semiconductor device including air spacer
SAMSUNG ELECTRONICS CO LTD4 citations73
US7952140B2May 31, 2011
Methods of fabricating semiconductor devices having multiple channel transistors and semiconductor devices fabricated thereby
SAMSUNG ELECTRONICS CO LTD6 citations73
US7803684B2Sep 28, 2010
Method of fabricating semiconductor device having a junction extended by a selective epitaxial growth (SEG) layer
SAMSUNG ELECTRONICS CO LTD6 citations73
US6974752B2Dec 13, 2005
Methods of fabricating integrated circuit devices having uniform silicide junctions
SAMSUNG ELECTRONICS CO LTD5 citations73
US8809993B2Aug 19, 2014
Semiconductor device having isolation region
SAMSUNG ELECTRONICS CO LTD4 citations69
US11355349B2Jun 7, 2022
Method of manufacturing semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations63
US7842572B2Nov 30, 2010
Methods of manufacturing semiconductor devices with local recess channel transistors
SAMSUNG ELECTRONICS CO LTD3 citations63
US7144798B2Dec 5, 2006
Semiconductor memory devices having extending contact pads and related methods
SAMSUNG ELECTRONICS CO LTD4 citations63
US8987907B2Mar 24, 2015
Semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations62
US7737512B2Jun 15, 2010
Integrated circuit devices having uniform silicide junctions
SAMSUNG ELECTRONICS CO LTD2 citations62
US7700445B2Apr 20, 2010
Method for fabricating multiple FETs of different types
SAMSUNG ELECTRONICS CO LTD2 citations62
US7691689B2Apr 6, 2010
Methods of fabricating semiconductor devices having multiple channel transistors and semiconductor devices fabricated thereby
SAMSUNG ELECTRONICS CO LTD4 citations62
US7329927B2Feb 12, 2008
Integrated circuit devices having uniform silicide junctions
SAMSUNG ELECTRONICS CO LTD1 citations62
US8008163B2Aug 30, 2011
Method of fabricating semiconductor device
SAMSUNG ELECTRONICS CO LTD6 citations60
US11676816B2Jun 13, 2023
Method of forming semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations52
US10867802B2Dec 15, 2020
Method of manufacturing semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations52
US7935600B2May 3, 2011
Method of manufacturing multi-channel transistor device and multi-channel transistor device manufactured using the method
SAMSUNG ELECTRONICS CO LTD0 citations52
US9536884B2Jan 3, 2017
Semiconductor device having positive fixed charge containing layer
SAMSUNG ELECTRONICS CO LTD1 citations51
US7833864B2Nov 16, 2010
Method of doping polysilicon layer that utilizes gate insulation layer to prevent diffusion of ion implanted impurities into underlying semiconductor substrate
SAMSUNG ELECTRONICS CO LTD0 citations51