Inventor

YANG WOUN-SUCK

KR13 patents

⚠️ This page may combine multiple inventors who share the name “YANG WOUN-SUCK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

9 patents

US7977725B2Jul 12, 2011

Integrated circuit semiconductor device including stacked level transistors

SAMSUNG ELECTRONICS CO LTD20 citations92

US7279774B2Oct 9, 2007

Bulk substrates in FinFETs with trench insulation surrounding FIN pairs having FINs separated by recess hole shallower than trench

SAMSUNG ELECTRONICS CO LTD26 citations92

US7655988B2Feb 2, 2010

Method of manufacturing multi-channel transistor device and multi-channel transistor device manufactured using the method

SAMSUNG ELECTRONICS CO LTD8 citations84

US7153733B2Dec 26, 2006

Method of fabricating fin field effect transistor using isotropic etching technique

SAMSUNG ELECTRONICS CO LTD14 citations84

US7592686B2Sep 22, 2009

Semiconductor device having a junction extended by a selective epitaxial growth (SEG) layer and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD13 citations83

US7803684B2Sep 28, 2010

Method of fabricating semiconductor device having a junction extended by a selective epitaxial growth (SEG) layer

SAMSUNG ELECTRONICS CO LTD6 citations73

US7429505B2Sep 30, 2008

Method of fabricating fin field effect transistor using isotropic etching technique

SAMSUNG ELECTRONICS CO LTD2 citations62

US7393769B2Jul 1, 2008

Transistor of a semiconductor device having a punchthrough protection layer and methods of forming the same

SAMSUNG ELECTRONICS CO LTD3 citations62

US7935600B2May 3, 2011

Method of manufacturing multi-channel transistor device and multi-channel transistor device manufactured using the method

SAMSUNG ELECTRONICS CO LTD0 citations52

LG SEMICON CO LTD

3 patents

US5668391ASep 16, 1997

KIM KEUN-NAM

1 patent

US9012982B2Apr 21, 2015

Recessed transistor and method of manufacturing the same

KIM KEUN-NAM0 citations40

YANG WOUN-SUCK

SAMSUNG ELECTRONICS CO LTD

Integrated circuit semiconductor device including stacked level transistors

Bulk substrates in FinFETs with trench insulation surrounding FIN pairs having FINs separated by recess hole shallower than trench

Method of manufacturing multi-channel transistor device and multi-channel transistor device manufactured using the method

Method of fabricating fin field effect transistor using isotropic etching technique

Semiconductor device having a junction extended by a selective epitaxial growth (SEG) layer and method of fabricating the same

Method of fabricating semiconductor device having a junction extended by a selective epitaxial growth (SEG) layer

Method of fabricating fin field effect transistor using isotropic etching technique

Transistor of a semiconductor device having a punchthrough protection layer and methods of forming the same

Method of manufacturing multi-channel transistor device and multi-channel transistor device manufactured using the method

LG SEMICON CO LTD

Vertical thin film transistor

Thin film transistor and a fabricating method therefor

Semiconductor memory device and method for fabricating the same

KIM KEUN-NAM

Recessed transistor and method of manufacturing the same