Inventor

XI HAIWEN

US128 patents

⚠️ This page may combine multiple inventors who share the name “XI HAIWEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

XI HAIWEN

SEAGATE TECHNOLOGY LLC

Structures for resistive random access memory cells

High frequency field assisted write device

Magnetic stack having reference layers with orthogonal magnetization orientation directions

Magnetic memory cell construction

Magnetic tunnel junction and memristor apparatus

Memory with separate read and write paths

Spin-transfer torque memory self-reference read and write assist methods

Variable write and read methods for resistive random access memory

Write verify method for resistive random access memory

Non-volatile memory with stray magnetic field compensation

Magnetic stack design

Oscillating current assisted spin torque magnetic memory

Structures for resistive random access memory cells

Non-volatile memory cell with precessional switching

Magnetic oscillator based biosensor

Random bit generator that applies alternating current (AC) to magnetic tunnel junction to generate a random bit

Memory cell with phonon-blocking insulating layer

Magnetic stack having assist layers

NAND based resistive sense memory cell architecture

STRAM with composite free magnetic element

Thermally assisted multi-bit MRAM

Semiconductor device with thermally coupled phase change layers

Non-volatile memory cell with non-ohmic selection layer

Asymmetric write current compensation

Magnetic shift register as counter and data storage device

Nonvolatile programmable logic gates and adders

Enhancing read and write sense margins in a resistive sense element

NAND based resistive sense memory cell architecture

Spin-torque memory with unidirectional write scheme

XI HAIWEN

Write verify method for resistive random access memory

Non-volatile memory cell with lateral pinning

Memory with separate read and write paths

Magnetic stack design

Patterned media bits with cladding shell

Magnetic tracks with domain wall storage anchors

Programmable metallization memory cells via selective channel forming

Write verify method for resistive random access memory

Magnetic memory element with multi-domain storage layer

ZHENG YUANKAI

Magnetic stack having assist layer

STRAM with composite free magnetic element

Memory cell with phonon-blocking insulating layer

Non volatile memory including stabilizing structures

Thermally assisted multi-bit MRAM

Magnetic memory with phonon glass electron crystal material

GAO KAIZHONG

STRAM with compensation element and method of making the same

Magnetic memory cell construction

SEAGATE TECHNOLOGY

Magnetic stack having assist layer

SEAGATE TEACHNOLOGY LLC

Magnetic random access memory (MRAM) utilizing magnetic flip-flop structures

JIN INSIK

Method of switching out-of-plane magnetic tunnel junction cells

WANG XIAOBIN

Tunable random bit generator with magnetic tunnel junction