Inventor
LI CHING I
TW48 patents
⚠️ This page may combine multiple inventors who share the name “LI CHING I”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
26 patentsUS11869761B2Jan 9, 2024
Back-side deep trench isolation structure for image sensor
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations74
US11784204B2Oct 10, 2023
Enhanced trench isolation structure
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations74
US11916022B2Feb 27, 2024
Photolithography alignment process for bonded wafers
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US11721774B2Aug 8, 2023
Full well capacity for image sensor
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US11817469B2Nov 14, 2023
Light absorbing layer to enhance P-type diffusion for DTI in image sensors
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations67
US12581762B2Mar 17, 2026
Enhanced trench isolation structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12557391B2Feb 17, 2026
Method for forming semiconductor-on-insulator (SOI) substrate and recycle substrate
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12557610B2Feb 17, 2026
Multilayer isolation structure for high voltage silicon-on-insulator device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12426390B2Sep 23, 2025
Passivation for a vertical transfer gate in a pixel sensor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12408448B2Sep 2, 2025
Deep trench isolation structure and methods for fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12364046B2Jul 15, 2025
Photodiode structure for image sensor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12349492B2Jul 1, 2025
Photodiode structure for image sensor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12328886B2Jun 10, 2025
Metal-insulator-metal capacitor and methods of manufacturing
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12218184B2Feb 4, 2025
Semiconductor structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12002813B2Jun 4, 2024
Method for forming semiconductor-on-insulator (SOI) substrate by cleaving a multilayer structure along voids to separate a substrate
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11682578B2Jun 20, 2023
Multilayer isolation structure for high voltage silicon-on-insulator device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12500206B2Dec 16, 2025
Mechanical wafer alignment detection for bonding process
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11688717B2Jun 27, 2023
Mechanical wafer alignment detection for bonding process
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12230585B2Feb 18, 2025
Photolithography alignment process for bonded wafers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12125665B2Oct 22, 2024
Ion implantation system
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11362038B2Jun 14, 2022
Photolithography alignment process for bonded wafers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12484327B2Nov 25, 2025
Pre-cleaning for a deep trench isolation structure in a pixel sensor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US12074186B2Aug 27, 2024
Isolation epitaxial bi-layer for backside deep trench isolation structure in an image sensor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12439709B2Oct 7, 2025
Image sensor with diffusion barrier structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12532728B2Jan 20, 2026
Backside leakage prevention
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US12389710B2Aug 12, 2025
Full well capacity for image sensor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
UNITED MICROELECTRONICS CORP
11 patentsUS7473606B2Jan 6, 2009
Method for fabricating metal-oxide semiconductor transistors
UNITED MICROELECTRONICS CORP27 citations92
US9859164B1Jan 2, 2018
Method for manufacturing fins
UNITED MICROELECTRONICS CORP5 citations82
US11664425B2May 30, 2023
P-type field effect transistor and method for fabricating the same
UNITED MICROELECTRONICS CORP0 citations60
US11271078B2Mar 8, 2022
P-type field effect transistor having channel region with top portion and bottom portion
UNITED MICROELECTRONICS CORP0 citations60
US7776728B2Aug 17, 2010
Rapid thermal process method and rapid thermal process device
UNITED MICROELECTRONICS CORP1 citations52
US10468502B2Nov 5, 2019
Method of forming FinFET device
UNITED MICROELECTRONICS CORP0 citations51
US10263096B1Apr 16, 2019
FinFET device and method of forming the same
UNITED MICROELECTRONICS CORP0 citations51
US8053847B2Nov 8, 2011
Method for fabricating metal-oxide semiconductor transistors
UNITED MICROELECTRONICS CORP0 citations51
US11107689B2Aug 31, 2021
Method for fabricating semiconductor device
UNITED MICROELECTRONICS CORP0 citations50
US9947588B1Apr 17, 2018
Method for manufacturing fins
UNITED MICROELECTRONICS CORP0 citations50
US10651275B2May 12, 2020
P-type field effect transistor and method for fabricating the same
UNITED MICROELECTRONICS CORP0 citations49
ADVANCED ION BEAM TECH INC
3 patentsUS9450078B1Sep 20, 2016
Forming punch-through stopper regions in finFET devices
ADVANCED ION BEAM TECH INC20 citations92
US9431247B2Aug 30, 2016
Method for ion implantation
ADVANCED ION BEAM TECH INC1 citations48
US9748072B2Aug 29, 2017
Lower dose rate ion implantation using a wider ion beam
ADVANCED ION BEAM TECH INC0 citations37