Inventor

LEE RU-LIANG

TW72 patents

⚠️ This page may combine multiple inventors who share the name “LEE RU-LIANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

45 patents

US9431609B2Aug 30, 2016

Oxide film scheme for RRAM structure

TAIWAN SEMICONDUCTOR MFG CO LTD30 citations94

US9490158B2Nov 8, 2016

Bond chuck, methods of bonding, and tool including bond chuck

TAIWAN SEMICONDUCTOR MFG CO LTD15 citations93

US9178144B1Nov 3, 2015

RRAM cell with bottom electrode

TAIWAN SEMICONDUCTOR MFG CO LTD25 citations93

US10134945B1Nov 20, 2018

Wafer to wafer bonding techniques for III-V wafers and CMOS wafers

TAIWAN SEMICONDUCTOR MFG CO LTD18 citations86

US9893120B2Feb 13, 2018

Semiconductor structure and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84

US9754813B2Sep 5, 2017

Bond chuck, methods of bonding, and tool including bond chuck

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84

US9738516B2Aug 22, 2017

Structure to reduce backside silicon damage

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84

US9620372B2Apr 11, 2017

HK embodied flash memory and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84

US9577191B2Feb 21, 2017

RRAM cell bottom electrode formation

TAIWAN SEMICONDUCTOR MFG CO LTD11 citations84

US9576827B2Feb 21, 2017

Apparatus and method for wafer level bonding

TAIWAN SEMICONDUCTOR MFG CO LTD15 citations84

US10569520B2Feb 25, 2020

Wafer debonding system and method

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations83

US10155369B2Dec 18, 2018

Wafer debonding system and method

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations83

US11735624B2Aug 22, 2023

Multi-lateral recessed MIM structure

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

US11329148B2May 10, 2022

Semiconductor device having doped seed layer and method of manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

US10991758B2Apr 27, 2021

Semiconductor structure

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73

US10483386B2Nov 19, 2019

Semiconductor device, transistor having doped seed layer and method of manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

US10453932B2Oct 22, 2019

Semiconductor structure for flash memory cells and method of making same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73

US10304903B2May 28, 2019

Semiconductor structure

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73

US10138118B2Nov 27, 2018

Structure to reduce backside silicon damage

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73

US10049901B2Aug 14, 2018

Apparatus and method for wafer level bonding

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73

US9944516B2Apr 17, 2018

High aspect ratio etch without upper widening

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

US9905751B2Feb 27, 2018

Magnetic tunnel junction with reduced damage

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73

US9450057B2Sep 20, 2016

Split gate cells for embedded flash memory

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations73

US10889097B2Jan 12, 2021

Wafer debonding system and method

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72

US9595521B2Mar 14, 2017

Capacitive device

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72

US11916022B2Feb 27, 2024

Photolithography alignment process for bonded wafers

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71

US9679980B2Jun 13, 2017

Common source oxide formation by in-situ steam oxidation for embedded flash

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations70

US11721752B2Aug 8, 2023

Semiconductor device having doped seed layer and method of manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63

US11167982B2Nov 9, 2021

Semiconductor arrangement and formation thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63

US11145806B2Oct 12, 2021

Magnetic tunnel junction with reduced damage

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63

US10297604B2May 21, 2019

Split gate memory devices and methods of manufacturing

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63

US9159842B1Oct 13, 2015

Embedded nonvolatile memory

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations63

US9099324B2Aug 4, 2015

Semiconductor device with trench isolation

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations63

US12557610B2Feb 17, 2026

Multilayer isolation structure for high voltage silicon-on-insulator device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12471379B2Nov 11, 2025

Multi-function substrate

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12369352B2Jul 22, 2025

Thin film transfer using substrate with etch stop layer and diffusion barrier layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12113071B2Oct 8, 2024

Multi-function substrate

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11804531B2Oct 31, 2023

Thin film transfer using substrate with etch stop layer and diffusion barrier layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11682578B2Jun 20, 2023

Multilayer isolation structure for high voltage silicon-on-insulator device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11532642B2Dec 20, 2022

Multi-function substrate

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12040221B2Jul 16, 2024

Fabrication method of metal-free SOI wafer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61

US11232974B2Jan 25, 2022

Fabrication method of metal-free SOI wafer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61

US12230585B2Feb 18, 2025

Photolithography alignment process for bonded wafers

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60

US11362038B2Jun 14, 2022

Photolithography alignment process for bonded wafers

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60

US11404465B2Aug 2, 2022

Epitaxial semiconductor liner for enhancing uniformity of a charged layer in a deep trench and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52

TAIWAN SEMICONDUCTOR MFG

4 patents

US9368610B2Jun 14, 2016

High electron mobility transistor with indium nitride layer

TAIWAN SEMICONDUCTOR MFG6 citations84

US9136393B2Sep 15, 2015

HK embodied flash memory and methods of forming the same

TAIWAN SEMICONDUCTOR MFG8 citations84

US9105759B2Aug 11, 2015

Capacitive device and method of making the same

TAIWAN SEMICONDUCTOR MFG7 citations83

US9362271B2Jun 7, 2016

Capacitive device

TAIWAN SEMICONDUCTOR MFG1 citations62

APPLIED MATERIALS INC

1 patent

US6193836B1Feb 27, 2001

Center gas feed apparatus for a high density plasma reactor

APPLIED MATERIALS INC9 citations74

Showing the top 50 of 72 patents by PatentIndex Score.