Inventor
DREWERY JOHN
US39 patents
⚠️ This page may combine multiple inventors who share the name “DREWERY JOHN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
LAM RES CORP
25 patentsUS9583357B1Feb 28, 2017
Systems and methods for reverse pulsing
LAM RES CORP98 citations99
US9761459B2Sep 12, 2017
Systems and methods for reverse pulsing
LAM RES CORP93 citations98
US10784083B2Sep 22, 2020
RF voltage sensor incorporating multiple voltage dividers for detecting RF voltages at a pickup device of a substrate support
LAM RES CORP8 citations84
US10121641B2Nov 6, 2018
Large dynamic range RF voltage sensor and method for voltage mode RF bias application of plasma processing systems
LAM RES CORP8 citations84
US9824896B2Nov 21, 2017
Methods and systems for advanced ion control for etching processes
LAM RES CORP4 citations84
US10943789B2Mar 9, 2021
Methods and systems for advanced ion control for etching processes
LAM RES CORP2 citations73
US10679825B2Jun 9, 2020
Systems and methods for applying frequency and match tuning in a non-overlapping manner for processing substrate
LAM RES CORP3 citations73
US9934956B2Apr 3, 2018
Time multiplexed chemical delivery system
LAM RES CORP2 citations73
US9885493B2Feb 6, 2018
Air cooled faraday shield and methods for using the same
LAM RES CORP4 citations73
US10950454B2Mar 16, 2021
Integrated atomic layer passivation in TCP etch chamber and in-situ etch-ALP method
LAM RES CORP2 citations72
US10957561B2Mar 23, 2021
Gas delivery system
LAM RES CORP5 citations69
US12002653B2Jun 4, 2024
Systems and methods for compensating for RF power loss
LAM RES CORP2 citations64
US12283463B2Apr 22, 2025
Systems and methods for multi-level pulsing in RF plasma tools
LAM RES CORP0 citations63
US12437966B2Oct 7, 2025
Systems and methods for reverse pulsing
LAM RES CORP0 citations62
US12191122B2Jan 7, 2025
Electrostatic chuck with spatially tunable RF coupling to a wafer
LAM RES CORP0 citations62
US12165872B2Dec 10, 2024
Methods and systems for advanced ion control for etching processes
LAM RES CORP0 citations62
US11798785B2Oct 24, 2023
Systems for reverse pulsing
LAM RES CORP0 citations62
US11692732B2Jul 4, 2023
Air cooled faraday shield and methods for using the same
LAM RES CORP0 citations62
US11049726B2Jun 29, 2021
Methods and systems for advanced ion control for etching processes
LAM RES CORP0 citations62
US12505985B2Dec 23, 2025
Systems and methods for compensating for RF power loss
LAM RES CORP0 citations53
US12040605B2Jul 16, 2024
Voltage transient detector and current transient detector
LAM RES CORP0 citations52
US10690374B2Jun 23, 2020
Air cooled faraday shield and methods for using the same
LAM RES CORP0 citations52
US10153136B2Dec 11, 2018
Hollow RF feed with coaxial DC power feed
LAM RES CORP1 citations52
US9336901B2May 10, 2016
Track and hold feedback control of pulsed RF
LAM RES CORP1 citations52
US12482634B2Nov 25, 2025
Symmetric coupling of coil to direct-drive radiofrequency power supplies
LAM RES CORP0 citations51
NOVELLUS SYSTEMS INC
6 patentsUS7211509B1May 1, 2007
Method for enhancing the nucleation and morphology of ruthenium films on dielectric substrates using amine containing compounds
NOVELLUS SYSTEMS INC82 citations96
US7799200B1Sep 21, 2010
Selective electrochemical accelerator removal
NOVELLUS SYSTEMS INC21 citations92
US7341946B2Mar 11, 2008
Methods for the electrochemical deposition of copper onto a barrier layer of a work piece
NOVELLUS SYSTEMS INC20 citations92
US7695597B1Apr 13, 2010
Conductive planarization assembly for electrochemical mechanical planarization of a work piece
NOVELLUS SYSTEMS INC8 citations84
US7391086B1Jun 24, 2008
Conductive contacts and methods for fabricating conductive contacts for elctrochemical planarization of a work piece
NOVELLUS SYSTEMS INC4 citations62
US7456101B1Nov 25, 2008
Method for enhancing the nucleation and morphology of ruthenium films on dielectric substrates using amine containing compounds
NOVELLUS SYSTEMS INC2 citations60
TOKYO ELECTRON LTD
4 patentsUS6417626B1Jul 9, 2002
Immersed inductively—coupled plasma source
TOKYO ELECTRON LTD64 citations95
US6620736B2Sep 16, 2003
Electrostatic control of deposition of, and etching by, ionized materials in semiconductor processing
TOKYO ELECTRON LTD39 citations92
US6537421B2Mar 25, 2003
RF bias control in plasma deposition and etch systems with multiple RF power sources
TOKYO ELECTRON LTD33 citations92
US6652711B2Nov 25, 2003
Inductively-coupled plasma processing system
TOKYO ELECTRON LTD31 citations91