P

Inventor

WANG YANHONG

CN42 patents
⚠️ This page may combine multiple inventors who share the name “WANG YANHONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YANGTZE MEMORY TECH CO LTD

21 patents
US11935596B2Mar 19, 2024

Three-dimensional memory devices having polysilicon layer and bonded semiconductor structures and methods for forming the same

YANGTZE MEMORY TECH CO LTD4 citations75
US11929119B2Mar 12, 2024

Three-dimensional memory devices and memory system

YANGTZE MEMORY TECH CO LTD3 citations75
US12080665B2Sep 3, 2024

Memory devices having vertical transistors and methods for forming the same

YANGTZE MEMORY TECH CO LTD2 citations73
US12477749B2Nov 18, 2025

Three-dimensional memory devices having semiconductor assemblies bonded by bonding layer and methods for forming the same

YANGTZE MEMORY TECH CO LTD1 citations64
US12408338B2Sep 2, 2025

Memory devices having vertical transistors and methods for forming the same

YANGTZE MEMORY TECH CO LTD1 citations64
US12406954B2Sep 2, 2025

Memory devices having vertical transistors and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations62
US12278209B2Apr 15, 2025

Peripheral circuit having recess gate transistors and method for forming the same

YANGTZE MEMORY TECH CO LTD0 citations62
US12089413B2Sep 10, 2024

Peripheral circuit having recess gate transistors and method for forming the same

YANGTZE MEMORY TECH CO LTD0 citations62
US12069854B2Aug 20, 2024

Three-dimensional memory devices and methods for forming the same

YANGTZE MEMORY TECH CO LTD1 citations62
US12033967B2Jul 9, 2024

Memory devices having vertical transistors and methods for forming the same

YANGTZE MEMORY TECH CO LTD1 citations62
US12538479B2Jan 27, 2026

Memory devices and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations59
US12525558B2Jan 13, 2026

Three-dimensional memory devices and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations52
US12408339B2Sep 2, 2025

Memory devices having vertical transistors and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations52
US12388037B2Aug 12, 2025

Three-dimensional memory devices and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations52
US12388036B2Aug 12, 2025

Three-dimensional memory devices and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations52
US12300648B2May 13, 2025

Three-dimensional memory devices and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations52
US12176309B2Dec 24, 2024

Three-dimensional memory devices and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations52
US12170257B2Dec 17, 2024

Three-dimensional memory devices and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations52
US12113037B2Oct 8, 2024

Three-dimensional memory devices and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations52
US11996152B2May 28, 2024

Three-dimensional memory devices and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations52
US12389603B2Aug 12, 2025

Three-dimensional memory device and method for forming the same

YANGTZE MEMORY TECH CO LTD0 citations51

WANG YANHONG

5 patents

SAP SE

4 patents

HANGZHOU SANHUA RES INST CO LTD

2 patents

UNIV NEW JERSEY MED

1 patent

SRIVASTAVA AJAY KUMAR

1 patent

HUAWEI TECH CO LTD

1 patent

GURAJADA ADITYA P

1 patent

ANDRE MIHNEA

1 patent

ALIBABA CHINA CO LTD

1 patent

CHINA INST WATER RESOURCES & HYDROPOWER RES

1 patent

ZHOU PANFENG

1 patent

KYLAND TECHNOLOGY CO LTD

1 patent

UNIV SOUTH CHINA TECH

1 patent