Inventor
NOH YOUNG JIN
KR31 patents
⚠️ This page may combine multiple inventors who share the name “NOH YOUNG JIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
20 patentsUS7419918B2Sep 2, 2008
Methods of forming a thin-film structure, methods of manufacturing non-volatile semiconductor devices using the same, and resulting non-volatile semiconductor devices
SAMSUNG ELECTRONICS CO LTD13 citations84
US10283382B2May 7, 2019
Plasma processing apparatus
SAMSUNG ELECTRONICS CO LTD9 citations82
US10720447B2Jul 21, 2020
Integrated circuit memory devices having impurity-doped dielectric regions therein and methods of forming same
SAMSUNG ELECTRONICS CO LTD2 citations72
US10411034B2Sep 10, 2019
Integrated circuit memory devices having impurity-doped dielectric regions therein and methods of forming same
SAMSUNG ELECTRONICS CO LTD2 citations72
US10224185B2Mar 5, 2019
Substrate processing apparatus
SAMSUNG ELECTRONICS CO LTD5 citations70
US8008214B2Aug 30, 2011
Method of forming an insulation structure and method of manufacturing a semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD4 citations63
US8008154B2Aug 30, 2011
Methods of forming impurity containing insulating films and flash memory devices including the same
SAMSUNG ELECTRONICS CO LTD3 citations62
US7893482B2Feb 22, 2011
Semiconductor devices having tunnel and gate insulating layers
SAMSUNG ELECTRONICS CO LTD3 citations62
US7608509B2Oct 27, 2009
Method of manufacturing a flash memory device having compensation members formed on edge portions of a tunnel oxide layer
SAMSUNG ELECTRONICS CO LTD6 citations62
US7585729B2Sep 8, 2009
Method of manufacturing a non-volatile memory device
SAMSUNG ELECTRONICS CO LTD6 citations62
US10355099B2Jul 16, 2019
Semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations61
US12437969B2Oct 7, 2025
Plasma processing equipment
SAMSUNG ELECTRONICS CO LTD0 citations58
US11501953B2Nov 15, 2022
Plasma processing equipment
SAMSUNG ELECTRONICS CO LTD0 citations58
US7799639B2Sep 21, 2010
Methods of fabricating non-volatile memory devices including a chlorine cured tunnel oxide layer
SAMSUNG ELECTRONICS CO LTD0 citations52
US7537993B2May 26, 2009
Methods of forming semiconductor devices having tunnel and gate insulating layers
SAMSUNG ELECTRONICS CO LTD0 citations52
US9991281B2Jun 5, 2018
Semiconductor devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations49
US9754959B2Sep 5, 2017
Non-volatile semiconductor devices
SAMSUNG ELECTRONICS CO LTD1 citations49
US12125685B2Oct 22, 2024
Plasma processing apparatus
SAMSUNG ELECTRONICS CO LTD0 citations46
US10041170B2Aug 7, 2018
Dummy wafer, thin-film forming method, and method of fabricating a semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD0 citations40
US10020234B2Jul 10, 2018
Method of inspecting device using first measurement and second measurement lights
SAMSUNG ELECTRONICS CO LTD0 citations39
LEE DONG YOUL
3 patentsUS9535543B2Jan 3, 2017
Touch panel and method for manufacturing the same
LEE DONG YOUL4 citations70
US9955576B2Apr 24, 2018
Touch panel and method for manufacturing electrode member
LEE DONG YOUL0 citations49
US9900995B2Feb 20, 2018
Touch panel and method for manufacturing the same
LEE DONG YOUL0 citations39