Inventor
SHI HAORAN
KR7 patents
⚠️ This page may combine multiple inventors who share the name “SHI HAORAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SEOUL SEMICONDUCTOR CO LTD
4 patentsUS8796693B2Aug 5, 2014
Successive ionic layer adsorption and reaction process for depositing epitaxial ZnO on III-nitride-based light emitting diode and light emitting diode including epitaxial ZnO
SEOUL SEMICONDUCTOR CO LTD7 citations79
US10535803B2Jan 14, 2020
Light-emitting diode and method for manufacturing same
SEOUL SEMICONDUCTOR CO LTD0 citations51
US10020425B2Jul 10, 2018
Light-emitting diode and method for manufacturing same
SEOUL SEMICONDUCTOR CO LTD0 citations51
US8957427B2Feb 17, 2015
Successive ionic layer adsorption and reaction process for depositing epitaxial ZnO on III-nitride-based light emitting diode and light emitting diode including epitaxial ZnO
SEOUL SEMICONDUCTOR CO LTD0 citations44
GLOBALFOUNDRIES INC
3 patentsUS9312145B2Apr 12, 2016
Conformal nitridation of one or more fin-type transistor layers
GLOBALFOUNDRIES INC2 citations61
US9202697B2Dec 1, 2015
Forming a gate by depositing a thin barrier layer on a titanium nitride cap
GLOBALFOUNDRIES INC2 citations61
US9698269B2Jul 4, 2017
Conformal nitridation of one or more fin-type transistor layers
GLOBALFOUNDRIES INC1 citations51