Inventor

LI MIN

US593 patents

⚠️ This page may combine multiple inventors who share the name “LI MIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LI MIN

HEADWAY TECHNOLOGIES INC

Low resistance tunneling magnetoresistive sensor with composite inner pinned layer

Capping structure for enhancing dR/R of the MTJ device

Free layer for CPP GMR having iron rich NiFe

Process of manufacturing a seed/AFM combination for a CPP GMR device

FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structures

Method of adjusting CoFe free layer magnetostriction

FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structures

Bottom spin valves with continuous spacer exchange (or hard) bias

Multilayered structures comprising magnetic nano-oxide layers for current perpindicular to plane GMR heads

Two sensor reader for hard disk drive (HDD)

CPP device with an enhanced dR/R ratio

TMR or CPP structure with improved exchange properties

Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier

Heusler alloy with insertion layer to reduce the ordering temperature for CPP, TMR, MRAM, and other spintronics applications

GMR device having an improved free layer

TMR device with Hf based seed layer

Composite hard bias design with a soft magnetic underlayer for sensor applications

Magnetoresistive spin valve sensor with tri-layer free layer

Shield structure design to improve the stability of an MR head

Synthetic free layer for CPP GMR

Multiple magnetoresistive (MR) layer sensor element having longitudinal bias layers with non-parallel magnetizations

Method for forming a bottom spin valve magnetoresistive sensor element

Single top spin valve heads for ultra-high recording density

ZHANG KUNLIANG

Thin seeded Co/Ni multilayer film with perpendicular anisotropy for spintronic device applications

Assisting FGL oscillations with perpendicular anisotropy for MAMR

Modified field generation layer for microwave assisted magnetic recording

MTJ incorporating CoFe/Ni multilayer film with perpendicular magnetic anisotropy for MRAM application

Multilayer structure with high perpendicular anisotropy for device applications

Spin injection layer robustness for microwave assisted magnetic recording

CoFe/Ni Multilayer film with perpendicular anistropy for microwave assisted magnetic recording

Seed layer for TMR or CPP-GMR sensor

IBM

Unmanned aerial vehicle for interacting with a pet

Optimizing dynamical resource allocations for cache-friendly workloads in disaggregated data centers

SLA-based power management in disaggregated computing systems

Energy consumption as a measure of utilization and work characterization in a system

Optimizing dynamical resource allocations based on locality of resources in disaggregated data centers

Power management and utilization detection of computing components

Measuring utilization of resources in datacenters

Dynamically provisioning and scaling graphic processing units for data analytic workloads in a hardware cloud

ZHAO TONG

TMR device with novel free layer structure

TMR device with novel free layer structure

APPLIED SPINTRONICS INC

Structure and method to fabricate high performance MTJ devices for MRAM applications

Structure and method to fabricate high performance MTJ devices for MRAM applications

TDK CORP

CPP device with a plurality of metal oxide templates in a confining current path (CCP) spacer

BISSELL HOMECARE INC

Surface cleaning apparatus

DECKERS OUTDOOR CORP

Footwear outsole

FIREEYE INC

System and method for preventing malware evasion

SHENZHEN JIER TECH CO LTD

Electronic cigarette

FU ZHUN PRECISION IND SHENZHEN

Fastener and electronic device having the same

MAGIC TECHNOLOGIES INC

Method to form a nonmagnetic cap for the NiFe(free) MTJ stack to enhance dR/R