Inventor
ASAKO RYUICHI
JP29 patents
⚠️ This page may combine multiple inventors who share the name “ASAKO RYUICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOKYO ELECTRON LTD
23 patentsUS12444606B2Oct 14, 2025
Methods for forming vertically layered ionic liquid crystal (ILC) structures on a semiconductor substrate
TOKYO ELECTRON LTD2 citations72
US10304725B2May 28, 2019
Manufacturing methods to protect ULK materials from damage during etch processing to obtain desired features
TOKYO ELECTRON LTD2 citations72
US9780037B2Oct 3, 2017
Method of processing target object
TOKYO ELECTRON LTD2 citations71
US11538693B2Dec 27, 2022
Substrate processing method and substrate processing system
TOKYO ELECTRON LTD0 citations62
US11488836B2Nov 1, 2022
Apparatus for substrate processing
TOKYO ELECTRON LTD1 citations62
US11456184B2Sep 27, 2022
Substrate processing method and substrate processing system
TOKYO ELECTRON LTD0 citations62
US8357615B2Jan 22, 2013
Method of manufacturing semiconductor device
TOKYO ELECTRON LTD2 citations62
US7902077B2Mar 8, 2011
Semiconductor device manufacturing method that recovers damage of the etching target while supplying a predetermined recovery gas
TOKYO ELECTRON LTD2 citations62
US7799703B2Sep 21, 2010
Processing method and storage medium
TOKYO ELECTRON LTD3 citations61
US10923332B2Feb 16, 2021
Plasma processing method
TOKYO ELECTRON LTD0 citations60
US10903085B2Jan 26, 2021
Method for etching organic region
TOKYO ELECTRON LTD1 citations60
US12417928B2Sep 16, 2025
Substrate processing method and substrate processing system
TOKYO ELECTRON LTD0 citations59
US12379653B2Aug 5, 2025
Pattern formation method and photosensitive hard mask
TOKYO ELECTRON LTD0 citations56
US12011738B2Jun 18, 2024
Substrate processing method and ionic liquid
TOKYO ELECTRON LTD0 citations56
US12532683B2Jan 20, 2026
Apparatus for substrate processing
TOKYO ELECTRON LTD0 citations52
US10777425B2Sep 15, 2020
Method of processing substrate
TOKYO ELECTRON LTD0 citations52
US11842900B2Dec 12, 2023
Etching method and plasma processing apparatus
TOKYO ELECTRON LTD0 citations51
US10083859B2Sep 25, 2018
Coating formation method and semiconductor device manufacturing method using the coating formation method
TOKYO ELECTRON LTD0 citations51
US9892934B2Feb 13, 2018
Method for removing halogen and method for manufacturing semiconductor device
TOKYO ELECTRON LTD0 citations51
US10734204B2Aug 4, 2020
Method for cleaning components of plasma processing apparatus
TOKYO ELECTRON LTD0 citations49
US10626497B2Apr 21, 2020
Method for cleaning components of plasma processing apparatus
TOKYO ELECTRON LTD0 citations49
US12406862B2Sep 2, 2025
Vacuum processing apparatus and oxidizing gas removal method
TOKYO ELECTRON LTD0 citations48
US7521098B2Apr 21, 2009
Method of processing an organic-film
TOKYO ELECTRON LTD0 citations41
ASAKO RYUICHI
5 patentsUS8268721B2Sep 18, 2012
Semiconductor device and semiconductor device manufacturing method
ASAKO RYUICHI3 citations61
US8101507B2Jan 24, 2012
Semiconductor device manufacturing method and semiconductor device manufacturing apparatus
ASAKO RYUICHI3 citations60
US8058153B2Nov 15, 2011
Method for recovering damage of low dielectric insulating film for manufacturing semiconductor device
ASAKO RYUICHI3 citations59
US8614140B2Dec 24, 2013
Semiconductor device manufacturing apparatus
ASAKO RYUICHI1 citations50
US8288252B2Oct 16, 2012
Method for recovering damaged components in lower region of low dielectric insulating film
ASAKO RYUICHI0 citations48