Inventor
SHAW JONATHAN T
US16 patents
⚠️ This page may combine multiple inventors who share the name “SHAW JONATHAN T”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
14 patentsUS9412667B2Aug 9, 2016
Asymmetric high-k dielectric for reducing gate induced drain leakage
IBM22 citations96
US9859122B2Jan 2, 2018
Asymmetric high-k dielectric for reducing gate induced drain leakage
IBM7 citations92
US9768071B2Sep 19, 2017
Asymmetric high-K dielectric for reducing gate induced drain leakage
IBM6 citations92
US9721843B2Aug 1, 2017
Asymmetric high-k dielectric for reducing gate induced drain leakage
IBM6 citations92
US9685379B2Jun 20, 2017
Asymmetric high-k dielectric for reducing gate induced drain leakage
IBM9 citations92
US9577061B2Feb 21, 2017
Asymmetric high-K dielectric for reducing gate induced drain leakage
IBM11 citations92
US9570354B2Feb 14, 2017
Asymmetric high-K dielectric for reducing gate induced drain leakage
IBM12 citations92
US9559010B2Jan 31, 2017
Asymmetric high-k dielectric for reducing gate induced drain leakage
IBM7 citations92
US9543213B2Jan 10, 2017
Asymmetric high-k dielectric for reducing gate induced drain leakage
IBM10 citations92
US10367072B2Jul 30, 2019
Asymmetric high-k dielectric for reducing gate induced drain leakage
IBM3 citations84
US9922831B2Mar 20, 2018
Asymmetric high-k dielectric for reducing gate induced drain leakage
IBM5 citations84
US9837319B2Dec 5, 2017
Asymmetric high-K dielectric for reducing gate induced drain leakage
IBM3 citations84
US10374048B2Aug 6, 2019
Asymmetric high-k dielectric for reducing gate induced drain leakage
IBM1 citations73
US10381452B2Aug 13, 2019
Asymmetric high-k dielectric for reducing gate induced drain leakage
IBM0 citations63