Inventor
LEE DOOHYUN
KR23 patents
⚠️ This page may combine multiple inventors who share the name “LEE DOOHYUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
16 patentsUS10923475B2Feb 16, 2021
Semiconductor device
SAMSUNG ELECTRONICS CO LTD6 citations82
US12382681B2Aug 5, 2025
Multi-bridge channel field effect transistor with reduced gate-channel leakage current
SAMSUNG ELECTRONICS CO LTD2 citations73
US11264386B2Mar 1, 2022
Semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations71
US11177362B2Nov 16, 2021
Semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations71
US10964791B2Mar 30, 2021
Semiconductor device having silicides and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD5 citations71
US11393909B2Jul 19, 2022
Semiconductor devices inlcluding a fin field effect transistor
SAMSUNG ELECTRONICS CO LTD2 citations70
US11735640B2Aug 22, 2023
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations61
US11538913B2Dec 27, 2022
Semiconductor device having silicides and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11978775B2May 7, 2024
Method of fabricating semiconductor devices including a fin field effect transistor
SAMSUNG ELECTRONICS CO LTD0 citations60
US11705454B2Jul 18, 2023
Active regions via contacts having various shaped segments off-set from gate via contact
SAMSUNG ELECTRONICS CO LTD0 citations60
US12014957B2Jun 18, 2024
Semiconductor device having a source/drain contact plug with an upwardly protruding portion
SAMSUNG ELECTRONICS CO LTD0 citations59
US11309218B2Apr 19, 2022
Method of manufacturing a semiconductor device having a source/drain contact plug with a recessed portion using a mask pattern layer
SAMSUNG ELECTRONICS CO LTD0 citations59
US12356659B2Jul 8, 2025
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations51
US12094940B2Sep 17, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations51
US12525535B2Jan 13, 2026
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations50
US12563775B2Feb 24, 2026
Transistor devices having buried interconnection line below source/drain regions and one or more protective layers covering lower surfaces of gate structures
SAMSUNG ELECTRONICS CO LTD0 citations47
SAMSUNG DISPLAY CO LTD
2 patentsDAEGU GYEONGBUK MEDICAL INNOVATION FOUND
2 patentsUS12502434B2Dec 23, 2025
Compound comprising EZH2 inhibitor and E3 ligase binder and pharmaceutical composition for preventing or treating EZH2-associated disease comprising same as active ingredient
DAEGU GYEONGBUK MEDICAL INNOVATION FOUND0 citations45
US12583818B2Mar 24, 2026
Compound, preparation method thereof, and use thereof
DAEGU GYEONGBUK MEDICAL INNOVATION FOUND0 citations44