P

Inventor

LEE DOOHYUN

KR23 patents
⚠️ This page may combine multiple inventors who share the name “LEE DOOHYUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

16 patents
US10923475B2Feb 16, 2021

Semiconductor device

SAMSUNG ELECTRONICS CO LTD6 citations82
US12382681B2Aug 5, 2025

Multi-bridge channel field effect transistor with reduced gate-channel leakage current

SAMSUNG ELECTRONICS CO LTD2 citations73
US11264386B2Mar 1, 2022

Semiconductor device

SAMSUNG ELECTRONICS CO LTD2 citations71
US11177362B2Nov 16, 2021

Semiconductor device

SAMSUNG ELECTRONICS CO LTD2 citations71
US10964791B2Mar 30, 2021

Semiconductor device having silicides and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD5 citations71
US11393909B2Jul 19, 2022

Semiconductor devices inlcluding a fin field effect transistor

SAMSUNG ELECTRONICS CO LTD2 citations70
US11735640B2Aug 22, 2023

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations61
US11538913B2Dec 27, 2022

Semiconductor device having silicides and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US11978775B2May 7, 2024

Method of fabricating semiconductor devices including a fin field effect transistor

SAMSUNG ELECTRONICS CO LTD0 citations60
US11705454B2Jul 18, 2023

Active regions via contacts having various shaped segments off-set from gate via contact

SAMSUNG ELECTRONICS CO LTD0 citations60
US12014957B2Jun 18, 2024

Semiconductor device having a source/drain contact plug with an upwardly protruding portion

SAMSUNG ELECTRONICS CO LTD0 citations59
US11309218B2Apr 19, 2022

Method of manufacturing a semiconductor device having a source/drain contact plug with a recessed portion using a mask pattern layer

SAMSUNG ELECTRONICS CO LTD0 citations59
US12356659B2Jul 8, 2025

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations51
US12094940B2Sep 17, 2024

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations51
US12525535B2Jan 13, 2026

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations50
US12563775B2Feb 24, 2026

Transistor devices having buried interconnection line below source/drain regions and one or more protective layers covering lower surfaces of gate structures

SAMSUNG ELECTRONICS CO LTD0 citations47

SAMSUNG DISPLAY CO LTD

2 patents

DAEGU GYEONGBUK MEDICAL INNOVATION FOUND

2 patents

SAMSUNG DISPLAY DEVICES CO LTD

1 patent

KYUNGPOOK NAT UNIV IND ACADEMIC COOP FOUND

1 patent

S&K THERAPEUTICS

1 patent