P

Inventor

MASUHARA TOSHIAKI

JP42 patents

Patents

42 patents
US4942556AJul 17, 1990

Semiconductor memory device

HITACHI LTD125 citations98
US4768076AAug 30, 1988

Recrystallized CMOS with different crystal planes

HITACHI LTD174 citations98
US5332910AJul 26, 1994

Semiconductor optical device with nanowhiskers

HITACHI LTD222 citations97
US4021835AMay 3, 1977

Semiconductor device and a method for fabricating the same

HITACHI LTD158 citations97
US5426745AJun 20, 1995

Apparatus including a pair of neural networks having disparate functions cooperating to perform instruction recognition

HITACHI LTD100 citations96
US5163111ANov 10, 1992

Customized personal terminal device

HITACHI LTD76 citations96
US5132771AJul 21, 1992

Semiconductor memory device having flip-flop circuits

HITACHI LTD56 citations96
US4701884AOct 20, 1987

Semiconductor memory for serial data access

HITACHI LTD120 citations96
US4539660ASep 3, 1985

Semiconductor integrated circuit

HITACHI LTD54 citations96
US4455495AJun 19, 1984

Programmable semiconductor integrated circuitry including a programming semiconductor element

HITACHI LTD142 citations96
US4581628AApr 8, 1986

Circuit programming by use of an electrically conductive light shield

HITACHI LTD60 citations95
US4937790AJun 26, 1990

Semiconductor memory device

HITACHI LTD28 citations93
US4901128AFeb 13, 1990

Semiconductor memory

HITACHI LTD25 citations93
US4805147AFeb 14, 1989

Stacked static random access memory cell having capacitor

HITACHI LTD54 citations93
US4672586AJun 9, 1987

Semiconductor memory having circuit effecting refresh on variable cycles

HITACHI LTD39 citations93
US4559550ADec 17, 1985

CCD Type solid-state imaging device

HITACHI LTD32 citations93
US4280065AJul 21, 1981

Tri-state type driver circuit

HITACHI LTD48 citations93
US6282611B1Aug 28, 2001

Digital information system, digital audio signal processor and signal converter

HITACHI LTD43 citations92
US4849801AJul 18, 1989

Semiconductor memory device having increased capacitance for the storing nodes of the memory cells

HITACHI LTD33 citations92
US4747082AMay 24, 1988

Semiconductor memory with automatic refresh means

HITACHI LTD37 citations92
US4710648ADec 1, 1987

Semiconductor including signal processor and transient detector for low temperature operation

HITACHI LTD38 citations92
US4492974AJan 8, 1985

DMOS With gate protection diode formed over base region

HITACHI LTD36 citations92
US4015281AMar 29, 1977

MIS-FETs isolated on common substrate

HITACHI LTD35 citations92
US5172335ADec 15, 1992

Semiconductor memory with divided bit load and data bus lines

HITACHI LTD25 citations91
US4616243AOct 7, 1986

Gate protection for a MOSFET

HITACHI LTD25 citations82
US4609835ASep 2, 1986

Semiconductor integrated circuit

HITACHI LTD23 citations82
US4377819AMar 22, 1983

Semiconductor device

HITACHI LTD23 citations81
US5237528AAug 17, 1993

Semiconductor memory

HITACHI LTD18 citations74
US5214496AMay 25, 1993

Semiconductor memory

HITACHI LTD13 citations74
US5028975AJul 2, 1991

Semiconductor devices and a process for producing the same

HITACHI LTD7 citations74
US4949145AAug 14, 1990

Homo-junction bipolar transistor having high base concentration and suitable for low temperature operation

HITACHI LTD12 citations74
US4864382ASep 5, 1989

Semiconductor device

HITACHI LTD9 citations74
US4792841ADec 20, 1988

Semiconductor devices and a process for producing the same

HITACHI LTD15 citations74
US4514766AApr 30, 1985

Solid-state imaging device

HITACHI LTD16 citations74
US4261004AApr 7, 1981

Semiconductor device

HITACHI LTD19 citations74
US4841486AJun 20, 1989

Semiconductor memory device and sense amplifier

HITACHI LTD7 citations73
US4797717AJan 10, 1989

Semiconductor memory device

HITACHI LTD16 citations73
US4089022AMay 9, 1978

Electron device

HITACHI LTD15 citations73
US4935901AJun 19, 1990

Semiconductor memory with divided bit load and data bus lines

HITACHI LTD13 citations72
US4199778AApr 22, 1980

Interconnection structure for semiconductor integrated circuits

HITACHI LTD8 citations71
US5091325AFeb 25, 1992

Process for making mos devices for low-temperature operation

HITACHI LTD2 citations63
US5041892AAug 20, 1991

Homo-junction bipolar transistor having high base concentration and suitable for low temperature operation

HITACHI LTD4 citations63