Inventor
NAKAMURA SHUNICHI
36 patents
⚠️ This page may combine multiple inventors who share the name “NAKAMURA SHUNICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SHINDENGEN ELECTRIC MFG
15 patentsUS11309415B2Apr 19, 2022
Wide gap semiconductor device
SHINDENGEN ELECTRIC MFG3 citations73
US10403497B2Sep 3, 2019
Method of manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device
SHINDENGEN ELECTRIC MFG2 citations73
US9831316B2Nov 28, 2017
Semiconductor device and method of manufacturing semiconductor device
SHINDENGEN ELECTRIC MFG5 citations70
US11342435B2May 24, 2022
Wide-gap semiconductor device
SHINDENGEN ELECTRIC MFG0 citations62
US11264494B2Mar 1, 2022
Wide-gap semiconductor device
SHINDENGEN ELECTRIC MFG0 citations62
US12363927B2Jul 15, 2025
Wide gap semiconductor device
SHINDENGEN ELECTRIC MFG0 citations61
US11437506B2Sep 6, 2022
Wide-gap semiconductor device
SHINDENGEN ELECTRIC MFG0 citations52
US11393911B2Jul 19, 2022
Method of manufacturing semiconductor device and semiconductor device
SHINDENGEN ELECTRIC MFG0 citations49
US10600869B2Mar 24, 2020
Silicon carbide semiconductor device and method of manufacturing the same
SHINDENGEN ELECTRIC MFG0 citations49
US10510841B2Dec 17, 2019
Method of manufacturing a silicon carbide semiconductor device
SHINDENGEN ELECTRIC MFG0 citations49
US9960228B2May 1, 2018
Wide gap semiconductor device and method of manufacturing the same
SHINDENGEN ELECTRIC MFG1 citations46
US11195907B2Dec 7, 2021
Semiconductor device and semiconductor device manufacturing method
SHINDENGEN ELECTRIC MFG0 citations45
US9496366B2Nov 15, 2016
Method for manufacturing silicon carbide (SiC) semiconductor device by introducing nitrogen concentration of 5X1019 cm-3 or more at a boundary surface between thermal oxide film and the SiC substrate and then removing the thermal oxide film
SHINDENGEN ELECTRIC MFG0 citations40
US9716168B2Jul 25, 2017
Silicon carbide semiconductor device, method of manufacturing silicon carbide semiconductor device and method of designing silicon carbide semiconductor device
SHINDENGEN ELECTRIC MFG0 citations38
US9640618B2May 2, 2017
Silicon carbide semiconductor device, method of manufacturing silicon carbide semiconductor device and method of designing silicon carbide semiconductor device
SHINDENGEN ELECTRIC MFG0 citations38
TOKUYAMA SODA KK
6 patentsUS4791144ADec 13, 1988
Microporous film and process for production thereof
TOKUYAMA SODA KK103 citations94
US4613643ASep 23, 1986
Porous sheet
TOKUYAMA SODA KK98 citations93
US5238735AAug 24, 1993
Microporous shaped article and process for preparation thereof
TOKUYAMA SODA KK100 citations91
US3953565AApr 27, 1976
Process for producing flame-retardant shaped articles of thermoplastic synthetic resins
TOKUYAMA SODA KK35 citations88
US4767580AAug 30, 1988
Process for preparation of porous sheets
TOKUYAMA SODA KK25 citations84
US4759702AJul 26, 1988
Stretching device for stretching tubular film
TOKUYAMA SODA KK4 citations56
MITSUBISHI ELECTRIC CORP
3 patentsUS4635132AJan 6, 1987
Printer used for a television receiver
MITSUBISHI ELECTRIC CORP86 citations96
US4626926ADec 2, 1986
Printer used for a television receiver
MITSUBISHI ELECTRIC CORP23 citations82
US4587569AMay 6, 1986
Printer for printing multi-standard television signals
MITSUBISHI ELECTRIC CORP7 citations73