Inventor
MIN SHINCHEOL
KR4 patents
Patents
4 patentsUS9287402B2Mar 15, 2016
Method of fabricating fin-field effect transistors (finFETs) having different fin widths
SAMSUNG ELECTRONICS CO LTD20 citations91
US8987100B2Mar 24, 2015
Method of fabricating fin-field effect transistors (finfets) having different fin widths
SAMSUNG ELECTRONICS CO LTD14 citations91
US9443935B2Sep 13, 2016
Method of fabricating fin-field effect transistors (finFETs) having different fin widths
SAMSUNG ELECTRONICS CO LTD13 citations83
US10192823B2Jan 29, 2019
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD5 citations71