P

Inventor

DISNEY DONALD RAY

US93 patents
⚠️ This page may combine multiple inventors who share the name “DISNEY DONALD RAY”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

POWER INTEGRATIONS INC

42 patents
US6882005B2Apr 19, 2005

High-voltage vertical transistor with a multi-layered extended drain structure

POWER INTEGRATIONS INC81 citations99
US6838346B2Jan 4, 2005

Method of fabricating a high-voltage transistor with a multi-layered extended drain structure

POWER INTEGRATIONS INC71 citations99
US6787847B2Sep 7, 2004

High-voltage vertical transistor with a multi-layered extended drain structure

POWER INTEGRATIONS INC82 citations99
US6750105B2Jun 15, 2004

Method of fabricating a high-voltage transistor with a multi-layered extended drain structure

POWER INTEGRATIONS INC78 citations99
US6635544B2Oct 21, 2003

Method of fabricating a high-voltage transistor with a multi-layered extended drain structure

POWER INTEGRATIONS INC96 citations99
US6573558B2Jun 3, 2003

High-voltage vertical transistor with a multi-layered extended drain structure

POWER INTEGRATIONS INC137 citations99
US6509220B2Jan 21, 2003

Method of fabricating a high-voltage transistor

POWER INTEGRATIONS INC154 citations99
US6501130B2Dec 31, 2002

High-voltage transistor with buried conduction layer

POWER INTEGRATIONS INC96 citations99
US6468847B1Oct 22, 2002

Method of fabricating a high-voltage transistor

POWER INTEGRATIONS INC128 citations99
US7494875B2Feb 24, 2009

Gate etch process for a high-voltage FET

POWER INTEGRATIONS INC53 citations98
US7335944B2Feb 26, 2008

High-voltage vertical transistor with a multi-gradient drain doping profile

POWER INTEGRATIONS INC89 citations98
US7253042B2Aug 7, 2007

Method of fabricating a high-voltage transistor with an extended drain structure

POWER INTEGRATIONS INC67 citations98
US7221011B2May 22, 2007

High-voltage vertical transistor with a multi-gradient drain doping profile

POWER INTEGRATIONS INC92 citations98
US6987299B2Jan 17, 2006

High-voltage lateral transistor with a multi-layered extended drain structure

POWER INTEGRATIONS INC86 citations98
US6768171B2Jul 27, 2004

High-voltage transistor with JFET conduction channels

POWER INTEGRATIONS INC81 citations98
US6734714B2May 11, 2004

Integrated circuit with closely coupled high voltage output and offline transistor pair

POWER INTEGRATIONS INC82 citations98
US6555873B2Apr 29, 2003

High-voltage lateral transistor with a multi-layered extended drain structure

POWER INTEGRATIONS INC128 citations98
US6424007B1Jul 23, 2002

High-voltage transistor with buried conduction layer

POWER INTEGRATIONS INC76 citations97
US7998817B2Aug 16, 2011

Method of fabricating a high-voltage transistor with an extended drain structure

POWER INTEGRATIONS INC27 citations96
US7829944B2Nov 9, 2010

High-voltage vertical transistor with a multi-layered extended drain structure

POWER INTEGRATIONS INC29 citations96
US7791132B2Sep 7, 2010

High-voltage vertical transistor with a multi-gradient drain doping profile

POWER INTEGRATIONS INC40 citations96
US7745291B2Jun 29, 2010

Method of fabricating a high-voltage transistor with an extended drain structure

POWER INTEGRATIONS INC27 citations96
US7648879B2Jan 19, 2010

High-voltage vertical transistor with a multi-gradient drain doping profile

POWER INTEGRATIONS INC32 citations96
US7459366B2Dec 2, 2008

High-voltage vertical transistor with a multi-gradient drain doping profile

POWER INTEGRATIONS INC53 citations96
US7381618B2Jun 3, 2008

Gate etch process for a high-voltage FET

POWER INTEGRATIONS INC52 citations96
US6818490B2Nov 16, 2004

Method of fabricating complementary high-voltage field-effect transistors

POWER INTEGRATIONS INC53 citations96
US6815293B2Nov 9, 2004

High-voltage lateral transistor with a multi-layered extended drain structure

POWER INTEGRATIONS INC67 citations96
US6781198B2Aug 24, 2004

High-voltage vertical transistor with a multi-layered extended drain structure

POWER INTEGRATIONS INC56 citations96
US6759289B2Jul 6, 2004

Method of fabricating a high-voltage transistor

POWER INTEGRATIONS INC49 citations96
US6730585B2May 4, 2004

Method of fabricating high-voltage transistor with buried conduction layer

POWER INTEGRATIONS INC47 citations96
US6680646B2Jan 20, 2004

Power integrated circuit with distributed gate driver

POWER INTEGRATIONS INC54 citations96
US6667213B2Dec 23, 2003

Method of fabricating a high-voltage transistor with a multi-layered extended drain structure

POWER INTEGRATIONS INC68 citations96
US6583663B1Jun 24, 2003

Power integrated circuit with distributed gate driver

POWER INTEGRATIONS INC63 citations96
US6563171B2May 13, 2003

High-voltage transistor with buried conduction layer

POWER INTEGRATIONS INC70 citations96
US6552597B1Apr 22, 2003

Integrated circuit with closely coupled high voltage output and offline transistor pair

POWER INTEGRATIONS INC56 citations96
US6504209B2Jan 7, 2003

High-voltage transistor with buried conduction layer

POWER INTEGRATIONS INC56 citations96
US6489190B2Dec 3, 2002

Method of fabricating a high-voltage transistor

POWER INTEGRATIONS INC50 citations96
US6465291B1Oct 15, 2002

High-voltage transistor with buried conduction layer

POWER INTEGRATIONS INC54 citations96
US7115958B2Oct 3, 2006

Lateral power MOSFET for high switching speeds

POWER INTEGRATIONS INC60 citations95
US6825536B2Nov 30, 2004

Lateral power MOSFET for high switching speeds

POWER INTEGRATIONS INC57 citations95
US6798020B2Sep 28, 2004

High-voltage lateral transistor with a multi-layered extended drain structure

POWER INTEGRATIONS INC55 citations95
US6555883B1Apr 29, 2003

Lateral power MOSFET for high switching speeds

POWER INTEGRATIONS INC73 citations95

ADVANCED ANALOGIC TECH INC

7 patents

WILLIAMS RICHARD K

1 patent

Showing the top 50 of 93 patents by PatentIndex Score.