Inventor
DISNEY DONALD RAY
US93 patents
⚠️ This page may combine multiple inventors who share the name “DISNEY DONALD RAY”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
POWER INTEGRATIONS INC
42 patentsUS6882005B2Apr 19, 2005
High-voltage vertical transistor with a multi-layered extended drain structure
POWER INTEGRATIONS INC81 citations99
US6838346B2Jan 4, 2005
Method of fabricating a high-voltage transistor with a multi-layered extended drain structure
POWER INTEGRATIONS INC71 citations99
US6787847B2Sep 7, 2004
High-voltage vertical transistor with a multi-layered extended drain structure
POWER INTEGRATIONS INC82 citations99
US6750105B2Jun 15, 2004
Method of fabricating a high-voltage transistor with a multi-layered extended drain structure
POWER INTEGRATIONS INC78 citations99
US6635544B2Oct 21, 2003
Method of fabricating a high-voltage transistor with a multi-layered extended drain structure
POWER INTEGRATIONS INC96 citations99
US6573558B2Jun 3, 2003
High-voltage vertical transistor with a multi-layered extended drain structure
POWER INTEGRATIONS INC137 citations99
US6509220B2Jan 21, 2003
Method of fabricating a high-voltage transistor
POWER INTEGRATIONS INC154 citations99
US6501130B2Dec 31, 2002
High-voltage transistor with buried conduction layer
POWER INTEGRATIONS INC96 citations99
US6468847B1Oct 22, 2002
Method of fabricating a high-voltage transistor
POWER INTEGRATIONS INC128 citations99
US7494875B2Feb 24, 2009
Gate etch process for a high-voltage FET
POWER INTEGRATIONS INC53 citations98
US7335944B2Feb 26, 2008
High-voltage vertical transistor with a multi-gradient drain doping profile
POWER INTEGRATIONS INC89 citations98
US7253042B2Aug 7, 2007
Method of fabricating a high-voltage transistor with an extended drain structure
POWER INTEGRATIONS INC67 citations98
US7221011B2May 22, 2007
High-voltage vertical transistor with a multi-gradient drain doping profile
POWER INTEGRATIONS INC92 citations98
US6987299B2Jan 17, 2006
High-voltage lateral transistor with a multi-layered extended drain structure
POWER INTEGRATIONS INC86 citations98
US6768171B2Jul 27, 2004
High-voltage transistor with JFET conduction channels
POWER INTEGRATIONS INC81 citations98
US6734714B2May 11, 2004
Integrated circuit with closely coupled high voltage output and offline transistor pair
POWER INTEGRATIONS INC82 citations98
US6555873B2Apr 29, 2003
High-voltage lateral transistor with a multi-layered extended drain structure
POWER INTEGRATIONS INC128 citations98
US6424007B1Jul 23, 2002
High-voltage transistor with buried conduction layer
POWER INTEGRATIONS INC76 citations97
US7998817B2Aug 16, 2011
Method of fabricating a high-voltage transistor with an extended drain structure
POWER INTEGRATIONS INC27 citations96
US7829944B2Nov 9, 2010
High-voltage vertical transistor with a multi-layered extended drain structure
POWER INTEGRATIONS INC29 citations96
US7791132B2Sep 7, 2010
High-voltage vertical transistor with a multi-gradient drain doping profile
POWER INTEGRATIONS INC40 citations96
US7745291B2Jun 29, 2010
Method of fabricating a high-voltage transistor with an extended drain structure
POWER INTEGRATIONS INC27 citations96
US7648879B2Jan 19, 2010
High-voltage vertical transistor with a multi-gradient drain doping profile
POWER INTEGRATIONS INC32 citations96
US7459366B2Dec 2, 2008
High-voltage vertical transistor with a multi-gradient drain doping profile
POWER INTEGRATIONS INC53 citations96
US7381618B2Jun 3, 2008
Gate etch process for a high-voltage FET
POWER INTEGRATIONS INC52 citations96
US6818490B2Nov 16, 2004
Method of fabricating complementary high-voltage field-effect transistors
POWER INTEGRATIONS INC53 citations96
US6815293B2Nov 9, 2004
High-voltage lateral transistor with a multi-layered extended drain structure
POWER INTEGRATIONS INC67 citations96
US6781198B2Aug 24, 2004
High-voltage vertical transistor with a multi-layered extended drain structure
POWER INTEGRATIONS INC56 citations96
US6759289B2Jul 6, 2004
Method of fabricating a high-voltage transistor
POWER INTEGRATIONS INC49 citations96
US6730585B2May 4, 2004
Method of fabricating high-voltage transistor with buried conduction layer
POWER INTEGRATIONS INC47 citations96
US6680646B2Jan 20, 2004
Power integrated circuit with distributed gate driver
POWER INTEGRATIONS INC54 citations96
US6667213B2Dec 23, 2003
Method of fabricating a high-voltage transistor with a multi-layered extended drain structure
POWER INTEGRATIONS INC68 citations96
US6583663B1Jun 24, 2003
Power integrated circuit with distributed gate driver
POWER INTEGRATIONS INC63 citations96
US6563171B2May 13, 2003
High-voltage transistor with buried conduction layer
POWER INTEGRATIONS INC70 citations96
US6552597B1Apr 22, 2003
Integrated circuit with closely coupled high voltage output and offline transistor pair
POWER INTEGRATIONS INC56 citations96
US6504209B2Jan 7, 2003
High-voltage transistor with buried conduction layer
POWER INTEGRATIONS INC56 citations96
US6489190B2Dec 3, 2002
Method of fabricating a high-voltage transistor
POWER INTEGRATIONS INC50 citations96
US6465291B1Oct 15, 2002
High-voltage transistor with buried conduction layer
POWER INTEGRATIONS INC54 citations96
US7115958B2Oct 3, 2006
Lateral power MOSFET for high switching speeds
POWER INTEGRATIONS INC60 citations95
US6825536B2Nov 30, 2004
Lateral power MOSFET for high switching speeds
POWER INTEGRATIONS INC57 citations95
US6798020B2Sep 28, 2004
High-voltage lateral transistor with a multi-layered extended drain structure
POWER INTEGRATIONS INC55 citations95
US6555883B1Apr 29, 2003
Lateral power MOSFET for high switching speeds
POWER INTEGRATIONS INC73 citations95
ADVANCED ANALOGIC TECH INC
7 patentsUS7683426B2Mar 23, 2010
High-voltage lateral DMOS device with diode clamp
ADVANCED ANALOGIC TECH INC51 citations98
US7605428B2Oct 20, 2009
High-voltage depletion mode MOSFET
ADVANCED ANALOGIC TECH INC54 citations98
US7719054B2May 18, 2010
High-voltage lateral DMOS device
ADVANCED ANALOGIC TECH INC58 citations97
US7812393B2Oct 12, 2010
High-voltage extended drain MOSFET
ADVANCED ANALOGIC TECH INC38 citations96
US7683453B2Mar 23, 2010
Edge termination region for high-voltage bipolar-CMOS-DMOS integrated circuit devices
ADVANCED ANALOGIC TECH INC32 citations96
US7576391B2Aug 18, 2009
High-voltage lateral trench MOSFET
ADVANCED ANALOGIC TECH INC31 citations96
US7489007B2Feb 10, 2009
High-voltage lateral DMOS device
ADVANCED ANALOGIC TECH INC45 citations96
WILLIAMS RICHARD K
1 patentShowing the top 50 of 93 patents by PatentIndex Score.