Inventor
HAN SANG-JIB
KR14 patents
Patents
14 patentsUS6256254B1Jul 3, 2001
Semiconductor memory device decoder
SAMSUNG ELECTRONICS CO LTD37 citations92
US6463002B2Oct 8, 2002
Refresh-type memory with zero write recovery time and no maximum cycle time
SAMSUNG ELECTRONICS CO LTD24 citations91
US6275437B1Aug 14, 2001
Refresh-type memory with zero write recovery time and no maximum cycle time
SAMSUNG ELECTRONICS CO LTD45 citations91
US6490223B1Dec 3, 2002
Integrated circuit capable of being burn-in tested using an alternating current stress and a testing method using the same
SAMSUNG ELECTRONICS CO LTD7 citations74
US6510094B2Jan 21, 2003
Method and apparatus for refreshing semiconductor memory
SAMSUNG ELECTRONICS CO LTD12 citations72
US7154790B2Dec 26, 2006
Multi-chip semiconductor packages and methods of operating the same
SAMSUNG ELECTRONICS CO LTD5 citations62
US6271705B1Aug 7, 2001
Data output circuits having enhanced ESD resistance and related methods
SAMSUNG ELECTRONICS CO LTD2 citations62
US7663217B2Feb 16, 2010
Semiconductor device package
SAMSUNG ELECTRONICS CO LTD4 citations61
US7541612B2Jun 2, 2009
Multi-chip package semiconductor device and method of detecting a failure thereof
SAMSUNG ELECTRONICS CO LTD2 citations61
US7486532B2Feb 3, 2009
Semiconductor multi-chip package including two semiconductor memory chips having different memory densities
SAMSUNG ELECTRONICS CO LTD2 citations53
US6816429B2Nov 9, 2004
Integrated circuit capable of being burn-in tested using an alternating current stress and a testing method using the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US6288926B1Sep 11, 2001
Static semiconductor memory device and fabricating method thereof
SAMSUNG ELECTRONICS CO LTD0 citations52
US5994943ANov 30, 1999
Data output circuits having enhanced ESD resistance and related methods
SAMSUNG ELECTRONICS CO LTD1 citations52
US8039274B2Oct 18, 2011
Multi-chip package semiconductor device and method of detecting a failure thereof
SAMSUNG ELECTRONICS CO LTD0 citations51