Inventor
LIN BEEN-HON
TW2 patents
Patents
2 patentsUS6100202AAug 8, 2000
Pre deposition stabilization method for forming a void free isotropically etched anisotropically patterned doped silicate glass layer
TAIWAN SEMICONDUCTOR MFG51 citations84
US6042887AMar 28, 2000
Process for forming a sausg inter metal dielectric layer by pre-coating the reactor
TAIWAN SEMICONDUCTOR MFG13 citations69