P

Inventor

WATANABE TOSHIHARU

US46 patents
⚠️ This page may combine multiple inventors who share the name “WATANABE TOSHIHARU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOSHIBA KK

25 patents
US7742331B2Jun 22, 2010

Nonvolatile semiconductor memory device and data erase/write method thereof

TOSHIBA KK222 citations99
US6342715B1Jan 29, 2002

Nonvolatile semiconductor memory device

TOSHIBA KK216 citations99
US6340611B1Jan 22, 2002

Nonvolatile semiconductor memory device

TOSHIBA KK160 citations99
US6160297ADec 12, 2000

Semiconductor memory device having a first source line arranged between a memory cell string and bit lines in the direction crossing the bit lines and a second source line arranged in parallel to the bit lines

TOSHIBA KK119 citations98
US6577533B2Jun 10, 2003

Nonvolatile semiconductor memory and method of manufacturing the same

TOSHIBA KK48 citations96
US6512262B2Jan 28, 2003

Non-volatile semiconductor memory device and method of manufacturing the same

TOSHIBA KK57 citations96
US5091762AFeb 25, 1992

Semiconductor memory device with a 3-dimensional structure

TOSHIBA KK65 citations96
US5142639AAug 25, 1992

Semiconductor memory device having a stacked capacitor cell structure

TOSHIBA KK77 citations94
US6762955B2Jul 13, 2004

Nonvolatile semiconductor memory having control gate with top flat surface covering storage layers of two adjacent transistors

TOSHIBA KK30 citations93
US6157056ADec 5, 2000

Semiconductor memory device having a plurality of memory cell transistors arranged to constitute memory cell arrays

TOSHIBA KK38 citations93
US6133601AOct 17, 2000

Non-volatile semiconductor memory device with inter-layer insulation film

TOSHIBA KK47 citations93
US5309008AMay 3, 1994

Semiconductor memory device having a trench capacitor

TOSHIBA KK38 citations93
US6900086B2May 31, 2005

Semiconductor device having MISFETs

TOSHIBA KK25 citations92
US6376879B2Apr 23, 2002

Semiconductor device having MISFETs

TOSHIBA KK40 citations92
US6228717B1May 8, 2001

Method of manufacturing semiconductor devices with alleviated electric field concentration at gate edge portions

TOSHIBA KK32 citations89
US6667211B2Dec 23, 2003

Non-volatile semiconductor memory device and method of manufacturing the same

TOSHIBA KK14 citations84
US5640035AJun 17, 1997

MOSFET having improved driving performance

TOSHIBA KK18 citations84
US4975754ADec 4, 1990

Trench dual-gate MOSFET

TOSHIBA KK21 citations77
US7884414B2Feb 8, 2011

Semiconductor memory device and method of fabrication of the same

TOSHIBA KK6 citations74
US5591999AJan 7, 1997

Electrically erasable programmable read only memory device with an improved memory cell pattern layout

TOSHIBA KK9 citations74
US5559736ASep 24, 1996

Non-volatile semiconductor memory device capable of preventing excessive-writing

TOSHIBA KK13 citations73
US9093140B2Jul 28, 2015

Semiconductor memory device

TOSHIBA KK1 citations63
US7115474B2Oct 3, 2006

Nonvolatile semiconductor memory and method of manufacturing the same

TOSHIBA KK1 citations63
US9165628B2Oct 20, 2015

Semiconductor memory device

TOSHIBA KK0 citations52
US8354318B2Jan 15, 2013

Semiconductor memory device and method of fabrication of the same

TOSHIBA KK0 citations52

CALSONIC KANSEI CORP

10 patents

SAKAE RIKEN KOGYO CO LTD

2 patents

CALSONIC CORP

1 patent

HITACHI LTD

1 patent

WATANABE TOSHIHARU

1 patent

OKI ELECTRIC IND CO LTD

1 patent

MIYAMOTO KOGYOSHO KK

1 patent

FUJI KIKO KK

1 patent

FUJI ELECTRIC CO LTD

1 patent

KOYO SEIKO CO

1 patent

SHIMAGUCHI HIROTADA

1 patent