P

Inventor

SONOBE YOSHIAKI

JP45 patents
⚠️ This page may combine multiple inventors who share the name “SONOBE YOSHIAKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

16 patents
US11158672B2Oct 26, 2021

Magnetic tunnel junction elements and magnetic resistance memory devices including the same

SAMSUNG ELECTRONICS CO LTD3 citations73
US10431279B2Oct 1, 2019

Magnetoresistive memory device

SAMSUNG ELECTRONICS CO LTD3 citations73
US10566042B2Feb 18, 2020

Magnetic tunnel junction devices and magnetoresistive memory devices

SAMSUNG ELECTRONICS CO LTD2 citations72
US9349944B2May 24, 2016

Magnetic tunnel junction device

SAMSUNG ELECTRONICS CO LTD6 citations72
US10840435B2Nov 17, 2020

Magnetic tunnel junction device and magnetic resistance memory device

SAMSUNG ELECTRONICS CO LTD4 citations71
US11942127B2Mar 26, 2024

Magnetic memory device and magnetic memory apparatus

SAMSUNG ELECTRONICS CO LTD0 citations63
US11922985B2Mar 5, 2024

Magnetic memory device and magnetic memory apparatus

SAMSUNG ELECTRONICS CO LTD0 citations59
US11522123B2Dec 6, 2022

Magnetic memory device

SAMSUNG ELECTRONICS CO LTD1 citations59
US12004355B2Jun 4, 2024

Magnetic tunnel junction element and magnetoresistive memory device

SAMSUNG ELECTRONICS CO LTD0 citations53
US10679686B2Jun 9, 2020

Apparatus including magnetoresistive memory device

SAMSUNG ELECTRONICS CO LTD0 citations52
US11871678B2Jan 9, 2024

Magnetic memory device and operation method thereof

SAMSUNG ELECTRONICS CO LTD0 citations50
US10395809B2Aug 27, 2019

Perpendicular magnetic layer and magnetic device including the same

SAMSUNG ELECTRONICS CO LTD0 citations50
US12125511B2Oct 22, 2024

Magnetic memory device and magnetic memory apparatus with perpendicular magnetic anisotropy

SAMSUNG ELECTRONICS CO LTD0 citations49
US11309006B2Apr 19, 2022

Magnetic memory devices including magnetic structure with magnetic domains

SAMSUNG ELECTRONICS CO LTD0 citations49
US11302373B2Apr 12, 2022

Race track magnetic memory device and writing method thereof

SAMSUNG ELECTRONICS CO LTD0 citations49
US10879451B2Dec 29, 2020

Magnetic tunnel junction device and magnetic resistance memory device

SAMSUNG ELECTRONICS CO LTD0 citations44

IBM

7 patents

SONOBE YOSHIAKI

7 patents

WD MEDIA SINGAPORE PTE LTD

5 patents

TOSHIBA KK

3 patents

YASUMORI JUNICHI

3 patents

WD MEDIA INC

1 patent

TOKYO SHIBAURA ELECTRIC CO

1 patent

KITA EIJI

1 patent

ANIYA MASANORI

1 patent