Inventor
FIGURA THOMAS A
US75 patents
⚠️ This page may combine multiple inventors who share the name “FIGURA THOMAS A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
46 patentsUS7416943B2Aug 26, 2008
Peripheral gate stacks and recessed array gates
MICRON TECHNOLOGY INC129 citations99
US6309975B1Oct 30, 2001
Methods of making implanted structures
MICRON TECHNOLOGY INC83 citations99
US6261964B1Jul 17, 2001
Material removal method for forming a structure
MICRON TECHNOLOGY INC309 citations99
US5597756AJan 28, 1997
Process for fabricating a cup-shaped DRAM capacitor using a multi-layer partly-sacrificial stack
MICRON TECHNOLOGY INC214 citations99
US5488011AJan 30, 1996
Method of forming contact areas between vertical conductors
MICRON TECHNOLOGY INC158 citations99
US6599840B2Jul 29, 2003
Material removal method for forming a structure
MICRON TECHNOLOGY INC54 citations96
US6461967B2Oct 8, 2002
Material removal method for forming a structure
MICRON TECHNOLOGY INC44 citations96
US6326295B1Dec 4, 2001
Method and structure for improved alignment tolerance in multiple, singulated plugs and interconnection
MICRON TECHNOLOGY INC33 citations96
US6048763AApr 11, 2000
Integrated capacitor bottom electrode with etch stop layer
MICRON TECHNOLOGY INC63 citations96
US6025624AFeb 15, 2000
Shared length cell for improved capacitance
MICRON TECHNOLOGY INC59 citations96
US5985732ANov 16, 1999
Method of forming integrated stacked capacitors with rounded corners
MICRON TECHNOLOGY INC46 citations96
US5849624ADec 15, 1998
Method of fabricating a bottom electrode with rounded corners for an integrated memory cell capacitor
MICRON TECHNOLOGY INC48 citations96
US5750441AMay 12, 1998
Mask having a tapered profile used during the formation of a semiconductor device
MICRON TECHNOLOGY INC37 citations96
US5654224AAug 5, 1997
Capacitor construction with oxidation barrier blocks
MICRON TECHNOLOGY INC43 citations96
US5472904ADec 5, 1995
Thermal trench isolation
MICRON TECHNOLOGY INC77 citations96
US5464786ANov 7, 1995
Method for forming a capacitor having recessed lateral reaction barrier layer edges
MICRON TECHNOLOGY INC60 citations96
US7939409B2May 10, 2011
Peripheral gate stacks and recessed array gates
MICRON TECHNOLOGY INC28 citations93
US6607966B2Aug 19, 2003
Selective method to form roughened silicon
MICRON TECHNOLOGY INC17 citations93
US6373084B2Apr 16, 2002
Shared length cell for improved capacitance
MICRON TECHNOLOGY INC16 citations93
US6303953B1Oct 16, 2001
Integrated capacitor bottom electrode with etch stop layer
MICRON TECHNOLOGY INC34 citations93
US6180452B1Jan 30, 2001
Shared length cell for improved capacitance
MICRON TECHNOLOGY INC22 citations93
US6066552AMay 23, 2000
Method and structure for improved alignment tolerance in multiple, singularized plugs
MICRON TECHNOLOGY INC16 citations93
US6027970AFeb 22, 2000
Method of increasing capacitance of memory cells incorporating hemispherical grained silicon
MICRON TECHNOLOGY INC39 citations93
US5872033AFeb 16, 1999
Method for increasing capacitance of an HSG rugged capacitor using a phosphine rich oxidation and subsequent wet etch
MICRON TECHNOLOGY INC31 citations93
US5837378ANov 17, 1998
Method of reducing stress-induced defects in silicon
MICRON TECHNOLOGY INC25 citations93
US5830793ANov 3, 1998
Method of selective texfturing for patterned polysilicon electrodes
MICRON TECHNOLOGY INC24 citations93
US5808854ASep 15, 1998
Capacitor construction with oxidation barrier blocks
MICRON TECHNOLOGY INC23 citations93
US5559666ASep 24, 1996
Capacitor construction with oxidation barrier blocks
MICRON TECHNOLOGY INC20 citations93
US7105403B2Sep 12, 2006
Double sided container capacitor for a semiconductor device and method for forming same
MICRON TECHNOLOGY INC19 citations92
US6645846B2Nov 11, 2003
Methods of forming conductive contacts to conductive structures
MICRON TECHNOLOGY INC15 citations92
US6596648B2Jul 22, 2003
Material removal method for forming a structure
MICRON TECHNOLOGY INC27 citations92
US6596642B2Jul 22, 2003
Material removal method for forming a structure
MICRON TECHNOLOGY INC18 citations92
US6534335B1Mar 18, 2003
Optimized low leakage diodes, including photodiodes
MICRON TECHNOLOGY INC27 citations92
US6117764ASep 12, 2000
Use of a plasma source to form a layer during the formation of a semiconductor device
MICRON TECHNOLOGY INC17 citations92
US5963804AOct 5, 1999
Method of making a doped silicon structure with impression image on opposing roughened surfaces
MICRON TECHNOLOGY INC25 citations92
US5950092ASep 7, 1999
Use of a plasma source to form a layer during the formation of a semiconductor device
MICRON TECHNOLOGY INC37 citations92
US7683413B2Mar 23, 2010
Double sided container capacitor for a semiconductor device
MICRON TECHNOLOGY INC13 citations84
US6507065B2Jan 14, 2003
Doped silicon structure with impression image on opposing roughened surfaces
MICRON TECHNOLOGY INC13 citations83
US5933727AAug 3, 1999
Method for increasing capacitance of an HSG rugged capacitor using a phosphine rich oxidation and subsequent wet etch
MICRON TECHNOLOGY INC14 citations82
US7019347B2Mar 28, 2006
Dynamic random access memory circuitry comprising insulative collars
MICRON TECHNOLOGY INC4 citations74
US6861713B2Mar 1, 2005
Integrated circuitry comprising insulative collars and integrated circuitry comprising sidewall spacers over a conductive line projecting outwardly from a first insulative material
MICRON TECHNOLOGY INC4 citations74
US6838714B2Jan 4, 2005
Low leakage diodes, including photodiodes
MICRON TECHNOLOGY INC8 citations74
US6524875B2Feb 25, 2003
Method for manufacturing tapered opening using an anisotropic etch during the formation of a semiconductor device
MICRON TECHNOLOGY INC8 citations74
US6429071B1Aug 6, 2002
Method of increasing capacitance of memory cells incorporating hemispherical grained silicon
MICRON TECHNOLOGY INC5 citations74
US6329109B1Dec 11, 2001
Mask having a tapered profile used during the formation of a semiconductor device
MICRON TECHNOLOGY INC12 citations74
US6323557B1Nov 27, 2001
Method and structure for improved alignment tolerance in multiple, singulated plugs
MICRON TECHNOLOGY INC3 citations74
MICRON SEMICONDUCTOR INC
3 patentsUS5696014ADec 9, 1997
Method for increasing capacitance of an HSG rugged capacitor using a phosphine rich oxidation and subsequent wet etch
MICRON SEMICONDUCTOR INC57 citations96
US5438016AAug 1, 1995
Method of semiconductor device isolation employing polysilicon layer for field oxide formation
MICRON SEMICONDUCTOR INC80 citations96
US5763286AJun 9, 1998
Process for manufacturing a DRAM capacitor having an annularly-grooved, cup-shaped storage-node plate which stores charge on inner and outer surfaces
MICRON SEMICONDUCTOR INC82 citations95
(unassigned)
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