Inventor

NAKAMAE MASAHIKO

JP9 patents

⚠️ This page may combine multiple inventors who share the name “NAKAMAE MASAHIKO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NEC CORP

5 patents

US6091081AJul 18, 2000

Insulating film comprising amorphous carbon fluoride, a semiconductor device comprising such an insulating film

NEC CORP55 citations96

US5296391AMar 22, 1994

Method of manufacturing a bipolar transistor having thin base region

NEC CORP64 citations96

US4800177AJan 24, 1989

Semiconductor device having multilayer silicide contact system and process of fabrication thereof

NEC CORP71 citations94

US4963957AOct 16, 1990

Semiconductor device having bipolar transistor with trench

NEC CORP33 citations92

US6372628B1Apr 16, 2002

Insulating film comprising amorphous carbon fluoride, a semiconductor device comprising such an insulating film, and a method for manufacturing the semiconductor device

NEC CORP11 citations73

SUMCO CORP

2 patents

US7977221B2Jul 12, 2011

Method for producing strained Si-SOI substrate and strained Si-SOI substrate produced by the same

SUMCO CORP4 citations62

US7767548B2Aug 3, 2010

Method for manufacturing semiconductor wafer including a strained silicon layer

SUMCO CORP4 citations59

SUMITOMO MITSUBISHI SILICON

1 patent

US7253082B2Aug 7, 2007

Pasted SOI substrate, process for producing the same and semiconductor device

SUMITOMO MITSUBISHI SILICON25 citations92

NIPPON ELECTRIC CO

1 patent

US4191595AMar 4, 1980

Method of manufacturing PN junctions in a semiconductor region to reach an isolation layer without exposing the semiconductor region surface

NIPPON ELECTRIC CO8 citations67