Inventor
TSU ROBERT
US20 patents
⚠️ This page may combine multiple inventors who share the name “TSU ROBERT”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TEXAS INSTRUMENTS INC
16 patentsUS6294420B1Sep 25, 2001
Integrated circuit capacitor
TEXAS INSTRUMENTS INC381 citations99
US6461955B1Oct 8, 2002
Yield improvement of dual damascene fabrication through oxide filling
TEXAS INSTRUMENTS INC54 citations96
US6207561B1Mar 27, 2001
Selective oxidation methods for metal oxide deposition on metals in capacitor fabrication
TEXAS INSTRUMENTS INC62 citations96
US5731220AMar 24, 1998
Method of making barium strontium titanate (BST) thin film by erbium donor doping
TEXAS INSTRUMENTS INC93 citations96
US5635741AJun 3, 1997
Barium strontium titanate (BST) thin films by erbium donor doping
TEXAS INSTRUMENTS INC44 citations96
US5617290AApr 1, 1997
Barium strontium titanate (BST) thin films using boron
TEXAS INSTRUMENTS INC61 citations96
US6096597AAug 1, 2000
Method for fabricating an integrated circuit structure
TEXAS INSTRUMENTS INC86 citations95
US6951812B2Oct 4, 2005
Copper transition layer for improving copper interconnection reliability
TEXAS INSTRUMENTS INC22 citations92
US6693356B2Feb 17, 2004
Copper transition layer for improving copper interconnection reliability
TEXAS INSTRUMENTS INC32 citations92
US6653676B2Nov 25, 2003
Integrated circuit capacitor
TEXAS INSTRUMENTS INC24 citations92
US5453908ASep 26, 1995
Barium strontium titanate (BST) thin films by holmium donor doping
TEXAS INSTRUMENTS INC36 citations92
US5432128AJul 11, 1995
Reliability enhancement of aluminum interconnects by reacting aluminum leads with a strengthening gas
TEXAS INSTRUMENTS INC30 citations92
US7402514B2Jul 22, 2008
Line-to-line reliability enhancement using a dielectric liner for a low dielectric constant interlevel and intralevel (or intermetal and intrametal) dielectric layer
TEXAS INSTRUMENTS INC17 citations82
US6331325B1Dec 18, 2001
Barium strontium titanate (BST) thin films using boron
TEXAS INSTRUMENTS INC9 citations74
US5609927AMar 11, 1997
Processing methods for high-dielectric-constant materials
TEXAS INSTRUMENTS INC17 citations74
US6060354AMay 9, 2000
In-situ doped rough polysilicon storage cell structure formed using gas phase nucleation
TEXAS INSTRUMENTS INC1 citations52
HITACHI LTD
4 patentsUS6696337B2Feb 24, 2004
Method of manufacturing a semiconductor integrated circuit device having a memory cell array and a peripheral circuit region
HITACHI LTD35 citations96
US6168985B1Jan 2, 2001
Semiconductor integrated circuit device including a DRAM having reduced parasitic bit line capacity and method of manufacturing same
HITACHI LTD46 citations96
US6037207AMar 14, 2000
Method of manufacturing semiconductor integrated circuit device including a DRAM having reduced parasitic bit line capacity
HITACHI LTD30 citations92
US6417045B1Jul 9, 2002
Method of manufacturing a semiconductor integrated circuit device including a DRAM having reduced parasitic bit line capacity
HITACHI LTD3 citations63