Inventor

QIN XIAOYE

US3 patents

⚠️ This page may combine multiple inventors who share the name “QIN XIAOYE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

2 patents

US11081590B2Aug 3, 2021

Metal oxide semiconductor field effect transistor with crystalline oxide layer on a III-V material

SAMSUNG ELECTRONICS CO LTD0 citations60

US10475930B2Nov 12, 2019

Method of forming crystalline oxides on III-V materials

SAMSUNG ELECTRONICS CO LTD0 citations49

INTEL CORP

1 patent

US12439627B2Oct 7, 2025

Gate structures to enable lower subthreshold slope in gallium nitride-based transistors

INTEL CORP0 citations39