Inventor
LEE KAN-YUAN
TW7 patents
⚠️ This page may combine multiple inventors who share the name “LEE KAN-YUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
4 patentsUS5796150AAug 18, 1998
High-performance and reliable thin film transistor (TFT) using plasma hydrogenation with a metal shield on the TFT channel
TAIWAN SEMICONDUCTOR MFG18 citations92
US5686335ANov 11, 1997
Method of making high-performance and reliable thin film transistor (TFT) using plasma hydrogenation with a metal shield on the TFT channel
TAIWAN SEMICONDUCTOR MFG28 citations92
US5707895AJan 13, 1998
Thin film transistor performance enhancement by water plasma treatment
TAIWAN SEMICONDUCTOR MFG13 citations73
US5834342ANov 10, 1998
Self-aligned silicidation of TFT source-drain region
TAIWAN SEMICONDUCTOR MFG1 citations45
UNITED MICROELECTRONICS CORP
3 patentsUS6207535B1Mar 27, 2001
Method of forming shallow trench isolation
UNITED MICROELECTRONICS CORP35 citations91
US6225219B1May 1, 2001
Method of stabilizing anti-reflection coating layer
UNITED MICROELECTRONICS CORP7 citations71
US6221761B1Apr 24, 2001
Method of stabilizing anti-reflection coating layer
UNITED MICROELECTRONICS CORP2 citations60