Inventor
KOH SHAO-MING
US18 patents
⚠️ This page may combine multiple inventors who share the name “KOH SHAO-MING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GLOBALFOUNDRIES INC
9 patentsUS9431512B2Aug 30, 2016
Methods of forming nanowire devices with spacers and the resulting devices
GLOBALFOUNDRIES INC32 citations94
US9660075B2May 23, 2017
Integrated circuits with dual silicide contacts and methods for fabricating same
GLOBALFOUNDRIES INC5 citations84
US9490340B2Nov 8, 2016
Methods of forming nanowire devices with doped extension regions and the resulting devices
GLOBALFOUNDRIES INC8 citations84
US9306019B2Apr 5, 2016
Integrated circuits with nanowires and methods of manufacturing the same
GLOBALFOUNDRIES INC12 citations84
US9196710B2Nov 24, 2015
Integrated circuits with relaxed silicon / germanium fins
GLOBALFOUNDRIES INC11 citations84
US9117842B2Aug 25, 2015
Methods of forming contacts to source/drain regions of FinFET devices
GLOBALFOUNDRIES INC9 citations84
US9293462B2Mar 22, 2016
Integrated circuits with dual silicide contacts and methods for fabricating same
GLOBALFOUNDRIES INC3 citations73
US9196694B2Nov 24, 2015
Integrated circuits with dual silicide contacts and methods for fabricating same
GLOBALFOUNDRIES INC5 citations73
US9177805B2Nov 3, 2015
Integrated circuits with metal-insulator-semiconductor (MIS) contact structures and methods for fabricating same
GLOBALFOUNDRIES INC3 citations62
TAIWAN SEMICONDUCTOR MFG CO LTD
9 patentsUS10490459B2Nov 26, 2019
Method for source/drain contact formation in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US11532504B2Dec 20, 2022
Low-resistance contact plugs and method forming same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11037924B2Jun 15, 2021
Method for forming source/drain contacts
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10741438B2Aug 11, 2020
Low-resistance contact plugs and method forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US12068191B2Aug 20, 2024
Low-resistance contact plugs and method forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12009363B2Jun 11, 2024
Method for forming source/drain contacts
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11217492B2Jan 4, 2022
Method for source/drain contact formation in semiconductor devices using common doping and common etching to n-type and p-type source/drains
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11145554B2Oct 12, 2021
Method for source/drain contact formation in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10153198B2Dec 11, 2018
Low-resistance contact plugs and method forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52