Inventor
KOIDE NORIKATSU
JP47 patents
⚠️ This page may combine multiple inventors who share the name “KOIDE NORIKATSU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOYODA GOSEI KK
34 patentsUS6121121ASep 19, 2000
Method for manufacturing gallium nitride compound semiconductor
TOYODA GOSEI KK277 citations99
US6040588AMar 21, 2000
Semiconductor light-emitting device
TOYODA GOSEI KK112 citations99
US5862167AJan 19, 1999
Light-emitting semiconductor device using gallium nitride compound
TOYODA GOSEI KK177 citations99
US6423984B1Jul 23, 2002
Light-emitting semiconductor device using gallium nitride compound semiconductor
TOYODA GOSEI KK85 citations98
US6420733B2Jul 16, 2002
Semiconductor light-emitting device and manufacturing method thereof
TOYODA GOSEI KK80 citations98
US5620557AApr 15, 1997
Sapphireless group III nitride semiconductor and method for making same
TOYODA GOSEI KK139 citations98
US6541293B2Apr 1, 2003
Semiconductor light-emitting device and manufacturing method thereof
TOYODA GOSEI KK63 citations96
US6362017B1Mar 26, 2002
Light-emitting semiconductor device using gallium nitride group compound
TOYODA GOSEI KK44 citations96
US6326236B1Dec 4, 2001
Semiconductor light-emitting device and manufacturing method thereof
TOYODA GOSEI KK78 citations96
US5733796AMar 31, 1998
Light-emitting semiconductor device using gallium nitride group compound
TOYODA GOSEI KK77 citations96
US5650641AJul 22, 1997
Semiconductor device having group III nitride compound and enabling control of emission color, and flat display comprising such device
TOYODA GOSEI KK56 citations96
US5587593ADec 24, 1996
Light-emitting semiconductor device using group III nitrogen compound
TOYODA GOSEI KK55 citations96
US5278433AJan 11, 1994
Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer
TOYODA GOSEI KK86 citations96
US7176497B2Feb 13, 2007
Group III nitride compound semiconductor
TOYODA GOSEI KK20 citations93
US6930329B2Aug 16, 2005
Method for manufacturing gallium nitride compound semiconductor
TOYODA GOSEI KK14 citations93
US6853009B2Feb 8, 2005
Light-emitting semiconductor device using gallium nitride compound semiconductor
TOYODA GOSEI KK16 citations93
US6617668B1Sep 9, 2003
Methods and devices using group III nitride compound semiconductor
TOYODA GOSEI KK25 citations93
US5604763AFeb 18, 1997
Group III nitride compound semiconductor laser diode and method for producing same
TOYODA GOSEI KK49 citations93
US5583879ADec 10, 1996
Gallum nitride group compound semiconductor laser diode
TOYODA GOSEI KK48 citations93
US6821800B2Nov 23, 2004
Semiconductor light-emitting device and manufacturing method thereof
TOYODA GOSEI KK29 citations92
US7619261B2Nov 17, 2009
Method for manufacturing gallium nitride compound semiconductor
TOYODA GOSEI KK11 citations84
US6881651B2Apr 19, 2005
Methods and devices using group III nitride compound semiconductor
TOYODA GOSEI KK13 citations84
US6580098B1Jun 17, 2003
Method for manufacturing gallium nitride compound semiconductor
TOYODA GOSEI KK12 citations82
US6249012B1Jun 19, 2001
Light emitting semiconductor device using gallium nitride group compound
TOYODA GOSEI KK13 citations82
US7045809B2May 16, 2006
Light-emitting semiconductor device using gallium nitride compound semiconductor
TOYODA GOSEI KK5 citations74
US6893945B2May 17, 2005
Method for manufacturing gallium nitride group compound semiconductor
TOYODA GOSEI KK3 citations74
US6835966B2Dec 28, 2004
Method for manufacturing gallium nitride compound semiconductor
TOYODA GOSEI KK5 citations74
US6472690B1Oct 29, 2002
Gallium nitride group compound semiconductor
TOYODA GOSEI KK7 citations74
US6607595B1Aug 19, 2003
Method for producing a light-emitting semiconductor device
TOYODA GOSEI KK8 citations72
US6818926B2Nov 16, 2004
Method for manufacturing gallium nitride compound semiconductor
TOYODA GOSEI KK3 citations70
US6962828B1Nov 8, 2005
Methods for manufacturing a light-emitting device
TOYODA GOSEI KK2 citations63
US6830992B1Dec 14, 2004
Method for manufacturing a gallium nitride group compound semiconductor
TOYODA GOSEI KK1 citations52
US6472689B1Oct 29, 2002
Light emitting device
TOYODA GOSEI KK0 citations52
US6188087B1Feb 13, 2001
Semiconductor light-emitting device
TOYODA GOSEI KK0 citations52
SHARP KK
9 patentsUS6703253B2Mar 9, 2004
Method for producing semiconductor light emitting device and semiconductor light emitting device produced by such method
SHARP KK82 citations98
US7154125B2Dec 26, 2006
Nitride-based semiconductor light-emitting device and manufacturing method thereof
SHARP KK65 citations97
US6410939B1Jun 25, 2002
Semiconductor light-emitting device and method of manufacturing the same
SHARP KK33 citations93
US6844572B2Jan 18, 2005
Light emitting semiconductor device and method of fabricating the same
SHARP KK49 citations92
US6765234B2Jul 20, 2004
Semiconductor light emitting device and method for producing the same
SHARP KK15 citations84
US6888867B2May 3, 2005
Semiconductor laser device and fabrication method thereof
SHARP KK14 citations83
US6806115B2Oct 19, 2004
Semiconductor light emitting device and method for producing the same
SHARP KK15 citations80
US7939349B2May 10, 2011
Nitride-based semiconductor light emitting device and manufacturing method thereof
SHARP KK5 citations62
US6822270B2Nov 23, 2004
Semiconductor light emitting device having gallium nitride based compound semiconductor layer
SHARP KK3 citations58