Inventor
CHAN YEEN TAT
SG2 patents
Patents
2 patentsUS6998682B2Feb 14, 2006
Method of forming a partially depleted silicon on insulator (PDSOI) transistor with a pad lock body extension
CHARTERED SEMICONDUCTOR MFG9 citations71
US6905919B2Jun 14, 2005
Method of forming a partially depleted silicon on insulator (PDSOI) transistor with a pad lock body extension
CHARTERED SEMICONDUCTOR MFG8 citations71