Inventor
STRACK HELMUT
DE75 patents
⚠️ This page may combine multiple inventors who share the name “STRACK HELMUT”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
29 patentsUS7879699B2Feb 1, 2011
Wafer and a method for manufacturing a wafer
INFINEON TECHNOLOGIES AG66 citations98
US6870201B1Mar 22, 2005
High voltage resistant edge structure for semiconductor components
INFINEON TECHNOLOGIES AG74 citations97
US6852567B1Feb 8, 2005
Method of assembling a semiconductor device package
INFINEON TECHNOLOGIES AG100 citations96
US6504230B2Jan 7, 2003
Compensation component and method for fabricating the compensation component
INFINEON TECHNOLOGIES AG63 citations96
US7800217B2Sep 21, 2010
Power semiconductor device connected in distinct layers of plastic
INFINEON TECHNOLOGIES AG27 citations93
US7759163B2Jul 20, 2010
Semiconductor module
INFINEON TECHNOLOGIES AG49 citations93
US7087981B2Aug 8, 2006
Metal semiconductor contact, semiconductor component, integrated circuit arrangement and method
INFINEON TECHNOLOGIES AG23 citations92
US6960798B2Nov 1, 2005
High-voltage semiconductor component
INFINEON TECHNOLOGIES AG25 citations92
US6894329B2May 17, 2005
High-voltage semiconductor component
INFINEON TECHNOLOGIES AG15 citations92
US6828609B2Dec 7, 2004
High-voltage semiconductor component
INFINEON TECHNOLOGIES AG41 citations92
US6649459B2Nov 18, 2003
Method for manufacturing a semiconductor component
INFINEON TECHNOLOGIES AG38 citations92
US6441408B2Aug 27, 2002
Power semiconductor component for high reverse voltages
INFINEON TECHNOLOGIES AG35 citations92
US9012980B1Apr 21, 2015
Method of manufacturing a semiconductor device including proton irradiation and semiconductor device including charge compensation structure
INFINEON TECHNOLOGIES AG11 citations84
US7982289B2Jul 19, 2011
Wafer and a method for manufacturing a wafer
INFINEON TECHNOLOGIES AG8 citations84
US7947532B2May 24, 2011
Power semiconductor device and method for its production
INFINEON TECHNOLOGIES AG12 citations84
US7795660B2Sep 14, 2010
Capacitor structure in trench structures of semiconductor devices and semiconductor devices comprising capacitor structures of this type and methods for fabricating the same
INFINEON TECHNOLOGIES AG8 citations84
US6825514B2Nov 30, 2004
High-voltage semiconductor component
INFINEON TECHNOLOGIES AG15 citations84
US6819089B2Nov 16, 2004
Power factor correction circuit with high-voltage semiconductor component
INFINEON TECHNOLOGIES AG19 citations84
US6812524B2Nov 2, 2004
Field effect controlled semiconductor component
INFINEON TECHNOLOGIES AG12 citations74
US6309974B1Oct 30, 2001
Method for eliminating residual oxygen impurities from silicon wafers pulled from a crucible
INFINEON TECHNOLOGIES AG7 citations73
US8378384B2Feb 19, 2013
Wafer and method for producing a wafer
INFINEON TECHNOLOGIES AG4 citations63
US7772693B2Aug 10, 2010
Panel, semiconductor device and method for the production thereof
INFINEON TECHNOLOGIES AG4 citations63
US7560783B2Jul 14, 2009
Metal-semiconductor contact, semiconductor component, integrated circuit arrangement and method
INFINEON TECHNOLOGIES AG5 citations63
US7344936B2Mar 18, 2008
Semiconductor wafer with a wiring structure, a semiconductor component, and methods for their production
INFINEON TECHNOLOGIES AG3 citations63
US7317252B2Jan 8, 2008
Ohmic contact configuration
INFINEON TECHNOLOGIES AG4 citations63
US7304349B2Dec 4, 2007
Power semiconductor component with increased robustness
INFINEON TECHNOLOGIES AG4 citations63
US7195994B2Mar 27, 2007
Method for production of deep p regions in silicon, and semiconductor components produced using the method
INFINEON TECHNOLOGIES AG6 citations63
US6614090B2Sep 2, 2003
Compensation semiconductor component and method of fabricating the semiconductor component
INFINEON TECHNOLOGIES AG4 citations63
US12107141B2Oct 1, 2024
Semiconductor device having a silicon carbide drift zone over a silicon carbide field stop zone
INFINEON TECHNOLOGIES AG0 citations62
SIEMENS AG
11 patentsUS6184555B1Feb 6, 2001
Field effect-controlled semiconductor component
SIEMENS AG479 citations94
US4893165AJan 9, 1990
Bipolar transistor controllable by field effect
SIEMENS AG32 citations92
US5583060ADec 10, 1996
Method for manufacturing field effect controlled semiconductor components
SIEMENS AG19 citations83
US6072220AJun 6, 2000
Integrated resistor
SIEMENS AG9 citations74
US5302537AApr 12, 1994
Manufacturing method for a low voltage power MISFET utilizing only three masks
SIEMENS AG9 citations74
US5087577AFeb 11, 1992
Manufacturing method for a power misfet
SIEMENS AG19 citations74
US4612448ASep 16, 1986
Electronic switch
SIEMENS AG19 citations74
US4543596ASep 24, 1985
Insulated-gate field-effect transistor (IGFET) with injector zone
SIEMENS AG12 citations74
US4760432AJul 26, 1988
Thyristor having controllable emitter-base shorts
SIEMENS AG14 citations73
US5311052AMay 10, 1994
Planar semiconductor component with stepped channel stopper electrode
SIEMENS AG16 citations72
US4903112AFeb 20, 1990
Semiconductor component with contact hole
SIEMENS AG9 citations72
INFINEON TECHNOLOGIES AUSTRIA
3 patentsUS7538412B2May 26, 2009
Semiconductor device with a field stop zone
INFINEON TECHNOLOGIES AUSTRIA144 citations98
US7554137B2Jun 30, 2009
Power semiconductor component with charge compensation structure and method for the fabrication thereof
INFINEON TECHNOLOGIES AUSTRIA8 citations84
US9171728B2Oct 27, 2015
Method for forming a power semiconductor device
INFINEON TECHNOLOGIES AUSTRIA3 citations63
MAUDER ANTON
2 patentsINFINEON AG
1 patentOTREMBA RALF
1 patentSCHULZE HANS-JOACHIM
1 patentSCHULZE HANS JOACHIM
1 patentHIRLER FRANZ
1 patentShowing the top 50 of 75 patents by PatentIndex Score.