Inventor
WU SZU-AN
TW36 patents
⚠️ This page may combine multiple inventors who share the name “WU SZU-AN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
20 patentsUS6136680AOct 24, 2000
Methods to improve copper-fluorinated silica glass interconnects
TAIWAN SEMICONDUCTOR MFG133 citations97
US6479098B1Nov 12, 2002
Method to solve particle performance of FSG layer by using UFU season film for FSG process
TAIWAN SEMICONDUCTOR MFG20 citations92
US6436791B1Aug 20, 2002
Method of manufacturing a very deep STI (shallow trench isolation)
TAIWAN SEMICONDUCTOR MFG23 citations91
US8021992B2Sep 20, 2011
High aspect ratio gap fill application using high density plasma chemical vapor deposition
TAIWAN SEMICONDUCTOR MFG21 citations90
US6784077B1Aug 31, 2004
Shallow trench isolation process
TAIWAN SEMICONDUCTOR MFG47 citations90
US6664177B1Dec 16, 2003
Dielectric ARC scheme to improve photo window in dual damascene process
TAIWAN SEMICONDUCTOR MFG31 citations89
US6573189B1Jun 3, 2003
Manufacture method of metal bottom ARC
TAIWAN SEMICONDUCTOR MFG17 citations84
US6815007B1Nov 9, 2004
Method to solve IMD-FSG particle and increase Cp yield by using a new tougher UFUN season film
TAIWAN SEMICONDUCTOR MFG14 citations83
US6586347B1Jul 1, 2003
Method and structure to improve the reliability of multilayer structures of FSG (F-doped SiO2) dielectric layers and metal layers in semiconductor integrated circuits
TAIWAN SEMICONDUCTOR MFG16 citations83
US6060374AMay 9, 2000
Monitor for molecular nitrogen during silicon implant
TAIWAN SEMICONDUCTOR MFG16 citations83
US6802935B2Oct 12, 2004
Semiconductor chamber process apparatus and method
TAIWAN SEMICONDUCTOR MFG13 citations82
US6281146B1Aug 28, 2001
Plasma enhanced chemical vapor deposition (PECVD) method for forming microelectronic layer with enhanced film thickness uniformity
TAIWAN SEMICONDUCTOR MFG14 citations74
US6585826B2Jul 1, 2003
Semiconductor wafer cleaning method to remove residual contamination including metal nitride particles
TAIWAN SEMICONDUCTOR MFG10 citations71
US6815072B2Nov 9, 2004
Method to solve particle performance of FSG layer by using UFU season film for FSG process
TAIWAN SEMICONDUCTOR MFG2 citations62
US6602560B2Aug 5, 2003
Method for removing residual fluorine in HDP-CVD chamber
TAIWAN SEMICONDUCTOR MFG2 citations58
US6358761B1Mar 19, 2002
Silicon monitor for detection of H2O2 in acid bath
TAIWAN SEMICONDUCTOR MFG6 citations54
US6979656B2Dec 27, 2005
Carbon and halogen doped silicate glass dielectric layer and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG0 citations52
US7349086B2Mar 25, 2008
Systems and methods for optical measurement
TAIWAN SEMICONDUCTOR MFG1 citations51
US6985222B2Jan 10, 2006
Chamber leakage detection by measurement of reflectivity of oxidized thin film
TAIWAN SEMICONDUCTOR MFG0 citations51
US7611589B2Nov 3, 2009
Methods of spin-on wafer cleaning
TAIWAN SEMICONDUCTOR MFG1 citations48
TAIWAN SEMICONDUCTOR MFG CO LTD
7 patentsUS9543234B2Jan 10, 2017
In-situ formation of silicon and tantalum containing barrier
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11018176B2May 25, 2021
Metal shielding layer in backside illumination image sensor chips and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US9620555B2Apr 11, 2017
Metal shielding layer in backside illumination image sensor chips and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations60
US9978784B2May 22, 2018
Grids in backside illumination image sensor chips and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9786707B2Oct 10, 2017
Image sensor isolation region and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9502290B2Nov 22, 2016
Oxidation-free copper metallization process using in-situ baking
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10276621B2Apr 30, 2019
Metal shielding layer in backside illumination image sensor chips and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
JANGJIAN SHIU-KO
6 patentsUS9219092B2Dec 22, 2015
Grids in backside illumination image sensor chips and methods for forming the same
JANGJIAN SHIU-KO24 citations92
US8294202B2Oct 23, 2012
Metal gate structure of a semiconductor device
JANGJIAN SHIU-KO8 citations84
US8946083B2Feb 3, 2015
In-situ formation of silicon and tantalum containing barrier
JANGJIAN SHIU-KO2 citations62
US9673244B2Jun 6, 2017
Image sensor isolation region and method of forming the same
JANGJIAN SHIU-KO0 citations52
US9123608B2Sep 1, 2015
Backside illuminated CMOS image sensor
JANGJIAN SHIU-KO0 citations52
US8847286B2Sep 30, 2014
Image sensor and method of manufacturing
JANGJIAN SHIU-KO0 citations52