P

Inventor

WANG YING LANG

TW156 patents
⚠️ This page may combine multiple inventors who share the name “WANG YING LANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG

33 patents
US6673661B1Jan 6, 2004

Self-aligned method for forming dual gate thin film transistor (TFT) device

TAIWAN SEMICONDUCTOR MFG96 citations98
US6291872B1Sep 18, 2001

Three-dimensional type inductor for mixed mode radio frequency device

TAIWAN SEMICONDUCTOR MFG99 citations97
US6136680AOct 24, 2000

Methods to improve copper-fluorinated silica glass interconnects

TAIWAN SEMICONDUCTOR MFG133 citations97
US6291331B1Sep 18, 2001

Re-deposition high compressive stress PECVD oxide film after IMD CMP process to solve more than 5 metal stack via process IMD crack issue

TAIWAN SEMICONDUCTOR MFG111 citations96
US6046112AApr 4, 2000

Chemical mechanical polishing slurry

TAIWAN SEMICONDUCTOR MFG57 citations96
US6099662AAug 8, 2000

Process for cleaning a semiconductor substrate after chemical-mechanical polishing

TAIWAN SEMICONDUCTOR MFG77 citations95
US6825120B1Nov 30, 2004

Metal surface and film protection method to prolong Q-time after metal deposition

TAIWAN SEMICONDUCTOR MFG18 citations93
US6670274B1Dec 30, 2003

Method of forming a copper damascene structure comprising a recessed copper-oxide-free initial copper structure

TAIWAN SEMICONDUCTOR MFG37 citations93
US6479098B1Nov 12, 2002

Method to solve particle performance of FSG layer by using UFU season film for FSG process

TAIWAN SEMICONDUCTOR MFG20 citations92
US6407007B1Jun 18, 2002

Method to solve the delamination of a silicon nitride layer from an underlying spin on glass layer

TAIWAN SEMICONDUCTOR MFG21 citations92
US6399522B1Jun 4, 2002

PE-silane oxide particle performance improvement

TAIWAN SEMICONDUCTOR MFG37 citations92
US6372645B1Apr 16, 2002

Methods to reduce metal bridges and line shorts in integrated circuits

TAIWAN SEMICONDUCTOR MFG22 citations92
US6268274B1Jul 31, 2001

Low temperature process for forming inter-metal gap-filling insulating layers in silicon wafer integrated circuitry

TAIWAN SEMICONDUCTOR MFG19 citations92
US6660638B1Dec 9, 2003

CMP process leaving no residual oxide layer or slurry particles

TAIWAN SEMICONDUCTOR MFG13 citations91
US6436791B1Aug 20, 2002

Method of manufacturing a very deep STI (shallow trench isolation)

TAIWAN SEMICONDUCTOR MFG23 citations91
US7359759B2Apr 15, 2008

Method and system for virtual metrology in semiconductor manufacturing

TAIWAN SEMICONDUCTOR MFG46 citations90
US6828226B1Dec 7, 2004

Removal of SiON residue after CMP

TAIWAN SEMICONDUCTOR MFG24 citations90
US6784077B1Aug 31, 2004

Shallow trench isolation process

TAIWAN SEMICONDUCTOR MFG47 citations90
US7837841B2Nov 23, 2010

Apparatuses for electrochemical deposition, conductive layer, and fabrication methods thereof

TAIWAN SEMICONDUCTOR MFG45 citations89
US6790778B1Sep 14, 2004

Method for capping over a copper layer

TAIWAN SEMICONDUCTOR MFG36 citations89
US9024369B2May 5, 2015

Metal shield structure and methods for BSI image sensors

TAIWAN SEMICONDUCTOR MFG8 citations84
US7078336B2Jul 18, 2006

Method and system for fabricating a copper barrier layer with low dielectric constant and leakage current

TAIWAN SEMICONDUCTOR MFG18 citations84
US6815007B1Nov 9, 2004

Method to solve IMD-FSG particle and increase Cp yield by using a new tougher UFUN season film

TAIWAN SEMICONDUCTOR MFG14 citations83
US6586347B1Jul 1, 2003

Method and structure to improve the reliability of multilayer structures of FSG (F-doped SiO2) dielectric layers and metal layers in semiconductor integrated circuits

TAIWAN SEMICONDUCTOR MFG16 citations83
US6531382B1Mar 11, 2003

Use of a capping layer to reduce particle evolution during sputter pre-clean procedures

TAIWAN SEMICONDUCTOR MFG16 citations83
US6802935B2Oct 12, 2004

Semiconductor chamber process apparatus and method

TAIWAN SEMICONDUCTOR MFG13 citations82
US7026233B2Apr 11, 2006

Method for reducing defects in post passivation interconnect process

TAIWAN SEMICONDUCTOR MFG12 citations81
US6776850B2Aug 17, 2004

Preventative maintenance aided tool for CVD chamber

TAIWAN SEMICONDUCTOR MFG16 citations79
US7803257B2Sep 28, 2010

Current-leveling electroplating/electropolishing electrode

TAIWAN SEMICONDUCTOR MFG6 citations74
US7207339B2Apr 24, 2007

Method for cleaning a plasma enhanced CVD chamber

TAIWAN SEMICONDUCTOR MFG7 citations74
US6626741B2Sep 30, 2003

Method for improving thickness uniformity on a semiconductor wafer during chemical mechanical polishing

TAIWAN SEMICONDUCTOR MFG7 citations74
US6395635B1May 28, 2002

Reduction of tungsten damascene residue

TAIWAN SEMICONDUCTOR MFG9 citations74
US6281146B1Aug 28, 2001

Plasma enhanced chemical vapor deposition (PECVD) method for forming microelectronic layer with enhanced film thickness uniformity

TAIWAN SEMICONDUCTOR MFG14 citations74

TAIWAN SEMICONDUCTOR MFG CO LTD

11 patents

CHEN KEI-WEI

1 patent

CHANG SHIH-CHIEH

1 patent

KUO CHUN-TING

1 patent

CHANG TING-CHANG

1 patent

HSIAO WEN CHU

1 patent

NIAN JUN-NAN

1 patent

Showing the top 50 of 156 patents by PatentIndex Score.