Inventor
YOO IN-KYEONG
KR79 patents
⚠️ This page may combine multiple inventors who share the name “YOO IN-KYEONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
41 patentsUS8043926B2Oct 25, 2011
Nonvolatile memory devices including oxygen-deficient metal oxide layers and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD48 citations98
US7842991B2Nov 30, 2010
Nonvolatile memory devices including oxygen-deficient metal oxide layers and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD99 citations98
US7015500B2Mar 21, 2006
Memory device utilizing carbon nanotubes
SAMSUNG ELECTRONICS CO LTD215 citations98
US7417271B2Aug 26, 2008
Electrode structure having at least two oxide layers and non-volatile memory device having the same
SAMSUNG ELECTRONICS CO LTD97 citations97
US6479924B1Nov 12, 2002
Ferroelectric emitter
SAMSUNG ELECTRONICS CO LTD54 citations96
US5812442ASep 22, 1998
Ferroelectric memory using leakage current and multi-numeration system ferroelectric memory
SAMSUNG ELECTRONICS CO LTD57 citations96
US6077716AJun 20, 2000
Matrix type multiple numeration system ferroelectric random access memory using leakage current
SAMSUNG ELECTRONICS CO LTD20 citations93
US5986298ANov 16, 1999
Matrix type multiple numeration system ferroelectric random access memory using leakage current
SAMSUNG ELECTRONICS CO LTD20 citations93
US7602042B2Oct 13, 2009
Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the same
SAMSUNG ELECTRONICS CO LTD26 citations92
US7521704B2Apr 21, 2009
Memory device using multi-layer with a graded resistance change
SAMSUNG ELECTRONICS CO LTD20 citations92
US7378328B2May 27, 2008
Method of fabricating memory device utilizing carbon nanotubes
SAMSUNG ELECTRONICS CO LTD18 citations92
US6867999B2Mar 15, 2005
Memory device including a transistor having functions of RAM and ROM
SAMSUNG ELECTRONICS CO LTD26 citations92
US6815783B2Nov 9, 2004
Single transistor type magnetic random access memory device and method of operating and manufacturing the same
SAMSUNG ELECTRONICS CO LTD20 citations92
US6740925B2May 25, 2004
Memory device comprising single transistor having functions of RAM and ROM and methods for operating and manufacturing the same
SAMSUNG ELECTRONICS CO LTD15 citations92
US5946284AAug 31, 1999
Disk apparatus using ferroelectric thin film
SAMSUNG ELECTRONICS CO LTD41 citations92
US6913984B2Jul 5, 2005
Method of manufacturing memory with nano dots
SAMSUNG ELECTRONICS CO LTD28 citations91
US7935953B2May 3, 2011
Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the same
SAMSUNG ELECTRONICS CO LTD11 citations84
US7714313B2May 11, 2010
Resistive RAM having at least one varistor and methods of operating the same
SAMSUNG ELECTRONICS CO LTD9 citations84
US7400027B2Jul 15, 2008
Nonvolatile memory device having two or more resistance elements and methods of forming and using the same
SAMSUNG ELECTRONICS CO LTD18 citations84
US6404667B1Jun 11, 2002
2T-1C ferroelectric random access memory and operation method thereof
SAMSUNG ELECTRONICS CO LTD18 citations84
US6992923B2Jan 31, 2006
Single transistor type magnetic random access memory device and method of operating and manufacturing the same
SAMSUNG ELECTRONICS CO LTD12 citations83
US7115306B2Oct 3, 2006
Method of horizontally growing carbon nanotubes and device having the same
SAMSUNG ELECTRONICS CO LTD12 citations81
US7835167B2Nov 16, 2010
Magnetic domain data storage devices and methods of operating the same
SAMSUNG ELECTRONICS CO LTD6 citations74
US7414295B2Aug 19, 2008
Transistor and method of operating transistor
SAMSUNG ELECTRONICS CO LTD8 citations74
US7407856B2Aug 5, 2008
Method of manufacturing a memory device
SAMSUNG ELECTRONICS CO LTD4 citations74
US7355951B2Apr 8, 2008
High density data recording/reproduction method utilizing electron emission and phase change media, and data recording system adopting the same, and media for the system
SAMSUNG ELECTRONICS CO LTD7 citations74
US7170843B2Jan 30, 2007
High-density data storage medium, method of manufacturing the data storage medium, data storage apparatus, and methods of writing data on, and reading and erasing data from the data storage medium by using the data storage apparatus
SAMSUNG ELECTRONICS CO LTD8 citations74
US6838727B2Jan 4, 2005
Memory device using a transistor and one resistant element for storage
SAMSUNG ELECTRONICS CO LTD5 citations74
US6476402B1Nov 5, 2002
Apparatus for pyroelectric emission lithography using patterned emitter
SAMSUNG ELECTRONICS CO LTD12 citations74
US5898609AApr 27, 1999
Ferroelectric memory having circuit for discharging pyroelectric charges
SAMSUNG ELECTRONICS CO LTD14 citations74
US5740100AApr 14, 1998
Method for preventing polarization loss in ferroelectric capacitors by controlling imprint
SAMSUNG ELECTRONICS CO LTD14 citations74
US5699290ADec 16, 1997
Ferroelectric read and write memory and driving method thereof
SAMSUNG ELECTRONICS CO LTD8 citations74
US6891241B2May 10, 2005
Single transistor type magnetic random access memory device and method of operating and manufacturing the same
SAMSUNG ELECTRONICS CO LTD7 citations73
US8350262B2Jan 8, 2013
Nonvolatile memory device and nonvolatile memory array including the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US7943926B2May 17, 2011
Nonvolatile memory device and nonvolatile memory array including the same
SAMSUNG ELECTRONICS CO LTD5 citations63
US7821809B2Oct 26, 2010
Nonvolatile memory device and method including resistor and transistor
SAMSUNG ELECTRONICS CO LTD6 citations63
US7482648B2Jan 27, 2009
Electronic device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD3 citations63
US7479212B2Jan 20, 2009
Method of manufacturing high-density data storage medium
SAMSUNG ELECTRONICS CO LTD2 citations63
US7095036B2Aug 22, 2006
Electron beam lithography apparatus using a patterned emitter and method of fabricating the patterned emitter
SAMSUNG ELECTRONICS CO LTD2 citations63
US7002841B2Feb 21, 2006
MRAM and methods for manufacturing and driving the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US6999346B2Feb 14, 2006
Memory device comprising single transistor having functions of RAM and ROM and methods for operating and manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations63
SEO SUN-AE
2 patentsUS8164130B2Apr 24, 2012
Nonvolatile memory device comprising one switching device and one resistant material and method of manufacturing the same
SEO SUN-AE7 citations83
US8101983B2Jan 24, 2012
Nonvolatile memory device comprising one switching device and one resistant material and method of manufacturing the same
SEO SUN-AE7 citations83
KIM YOUNG-BAE
1 patentKIM HO-JUNG
1 patentHAN SEUNG-HOON
1 patentSAMSUGN ELECTRONICS CO LTD
1 patentKIM DEOK-KEE
1 patentSK HYNIX INC
1 patentLEE SUNG-CHUL
1 patentShowing the top 50 of 79 patents by PatentIndex Score.