P

Inventor

YOO IN-KYEONG

KR79 patents
⚠️ This page may combine multiple inventors who share the name “YOO IN-KYEONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

41 patents
US8043926B2Oct 25, 2011

Nonvolatile memory devices including oxygen-deficient metal oxide layers and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD48 citations98
US7842991B2Nov 30, 2010

Nonvolatile memory devices including oxygen-deficient metal oxide layers and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD99 citations98
US7015500B2Mar 21, 2006

Memory device utilizing carbon nanotubes

SAMSUNG ELECTRONICS CO LTD215 citations98
US7417271B2Aug 26, 2008

Electrode structure having at least two oxide layers and non-volatile memory device having the same

SAMSUNG ELECTRONICS CO LTD97 citations97
US6479924B1Nov 12, 2002

Ferroelectric emitter

SAMSUNG ELECTRONICS CO LTD54 citations96
US5812442ASep 22, 1998

Ferroelectric memory using leakage current and multi-numeration system ferroelectric memory

SAMSUNG ELECTRONICS CO LTD57 citations96
US6077716AJun 20, 2000

Matrix type multiple numeration system ferroelectric random access memory using leakage current

SAMSUNG ELECTRONICS CO LTD20 citations93
US5986298ANov 16, 1999

Matrix type multiple numeration system ferroelectric random access memory using leakage current

SAMSUNG ELECTRONICS CO LTD20 citations93
US7602042B2Oct 13, 2009

Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the same

SAMSUNG ELECTRONICS CO LTD26 citations92
US7521704B2Apr 21, 2009

Memory device using multi-layer with a graded resistance change

SAMSUNG ELECTRONICS CO LTD20 citations92
US7378328B2May 27, 2008

Method of fabricating memory device utilizing carbon nanotubes

SAMSUNG ELECTRONICS CO LTD18 citations92
US6867999B2Mar 15, 2005

Memory device including a transistor having functions of RAM and ROM

SAMSUNG ELECTRONICS CO LTD26 citations92
US6815783B2Nov 9, 2004

Single transistor type magnetic random access memory device and method of operating and manufacturing the same

SAMSUNG ELECTRONICS CO LTD20 citations92
US6740925B2May 25, 2004

Memory device comprising single transistor having functions of RAM and ROM and methods for operating and manufacturing the same

SAMSUNG ELECTRONICS CO LTD15 citations92
US5946284AAug 31, 1999

Disk apparatus using ferroelectric thin film

SAMSUNG ELECTRONICS CO LTD41 citations92
US6913984B2Jul 5, 2005

Method of manufacturing memory with nano dots

SAMSUNG ELECTRONICS CO LTD28 citations91
US7935953B2May 3, 2011

Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the same

SAMSUNG ELECTRONICS CO LTD11 citations84
US7714313B2May 11, 2010

Resistive RAM having at least one varistor and methods of operating the same

SAMSUNG ELECTRONICS CO LTD9 citations84
US7400027B2Jul 15, 2008

Nonvolatile memory device having two or more resistance elements and methods of forming and using the same

SAMSUNG ELECTRONICS CO LTD18 citations84
US6404667B1Jun 11, 2002

2T-1C ferroelectric random access memory and operation method thereof

SAMSUNG ELECTRONICS CO LTD18 citations84
US6992923B2Jan 31, 2006

Single transistor type magnetic random access memory device and method of operating and manufacturing the same

SAMSUNG ELECTRONICS CO LTD12 citations83
US7115306B2Oct 3, 2006

Method of horizontally growing carbon nanotubes and device having the same

SAMSUNG ELECTRONICS CO LTD12 citations81
US7835167B2Nov 16, 2010

Magnetic domain data storage devices and methods of operating the same

SAMSUNG ELECTRONICS CO LTD6 citations74
US7414295B2Aug 19, 2008

Transistor and method of operating transistor

SAMSUNG ELECTRONICS CO LTD8 citations74
US7407856B2Aug 5, 2008

Method of manufacturing a memory device

SAMSUNG ELECTRONICS CO LTD4 citations74
US7355951B2Apr 8, 2008

High density data recording/reproduction method utilizing electron emission and phase change media, and data recording system adopting the same, and media for the system

SAMSUNG ELECTRONICS CO LTD7 citations74
US7170843B2Jan 30, 2007

High-density data storage medium, method of manufacturing the data storage medium, data storage apparatus, and methods of writing data on, and reading and erasing data from the data storage medium by using the data storage apparatus

SAMSUNG ELECTRONICS CO LTD8 citations74
US6838727B2Jan 4, 2005

Memory device using a transistor and one resistant element for storage

SAMSUNG ELECTRONICS CO LTD5 citations74
US6476402B1Nov 5, 2002

Apparatus for pyroelectric emission lithography using patterned emitter

SAMSUNG ELECTRONICS CO LTD12 citations74
US5898609AApr 27, 1999

Ferroelectric memory having circuit for discharging pyroelectric charges

SAMSUNG ELECTRONICS CO LTD14 citations74
US5740100AApr 14, 1998

Method for preventing polarization loss in ferroelectric capacitors by controlling imprint

SAMSUNG ELECTRONICS CO LTD14 citations74
US5699290ADec 16, 1997

Ferroelectric read and write memory and driving method thereof

SAMSUNG ELECTRONICS CO LTD8 citations74
US6891241B2May 10, 2005

Single transistor type magnetic random access memory device and method of operating and manufacturing the same

SAMSUNG ELECTRONICS CO LTD7 citations73
US8350262B2Jan 8, 2013

Nonvolatile memory device and nonvolatile memory array including the same

SAMSUNG ELECTRONICS CO LTD2 citations63
US7943926B2May 17, 2011

Nonvolatile memory device and nonvolatile memory array including the same

SAMSUNG ELECTRONICS CO LTD5 citations63
US7821809B2Oct 26, 2010

Nonvolatile memory device and method including resistor and transistor

SAMSUNG ELECTRONICS CO LTD6 citations63
US7482648B2Jan 27, 2009

Electronic device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD3 citations63
US7479212B2Jan 20, 2009

Method of manufacturing high-density data storage medium

SAMSUNG ELECTRONICS CO LTD2 citations63
US7095036B2Aug 22, 2006

Electron beam lithography apparatus using a patterned emitter and method of fabricating the patterned emitter

SAMSUNG ELECTRONICS CO LTD2 citations63
US7002841B2Feb 21, 2006

MRAM and methods for manufacturing and driving the same

SAMSUNG ELECTRONICS CO LTD2 citations63
US6999346B2Feb 14, 2006

Memory device comprising single transistor having functions of RAM and ROM and methods for operating and manufacturing the same

SAMSUNG ELECTRONICS CO LTD1 citations63

SEO SUN-AE

2 patents

KIM YOUNG-BAE

1 patent

KIM HO-JUNG

1 patent

HAN SEUNG-HOON

1 patent

SAMSUGN ELECTRONICS CO LTD

1 patent

KIM DEOK-KEE

1 patent

SK HYNIX INC

1 patent

LEE SUNG-CHUL

1 patent

Showing the top 50 of 79 patents by PatentIndex Score.