Inventor
SOK JUNG-HYUN
KR4 patents
Patents
4 patentsUS6815783B2Nov 9, 2004
Single transistor type magnetic random access memory device and method of operating and manufacturing the same
SAMSUNG ELECTRONICS CO LTD20 citations92
US6479848B2Nov 12, 2002
Magnetic random access memory with write and read circuits using magnetic tunnel junction (MTJ) devices
SAMSUNG ELECTRONICS CO LTD25 citations91
US6992923B2Jan 31, 2006
Single transistor type magnetic random access memory device and method of operating and manufacturing the same
SAMSUNG ELECTRONICS CO LTD12 citations83
US6891241B2May 10, 2005
Single transistor type magnetic random access memory device and method of operating and manufacturing the same
SAMSUNG ELECTRONICS CO LTD7 citations73