Inventor
LEE JUNE-KEY
KR18 patents
⚠️ This page may combine multiple inventors who share the name “LEE JUNE-KEY”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
15 patentsUS7892917B2Feb 22, 2011
Method for forming bismuth titanium silicon oxide thin film
SAMSUNG ELECTRONICS CO LTD18 citations92
US7013031B2Mar 14, 2006
Fingerprint sensor using a piezoelectric membrane
SAMSUNG ELECTRONICS CO LTD32 citations92
US6815783B2Nov 9, 2004
Single transistor type magnetic random access memory device and method of operating and manufacturing the same
SAMSUNG ELECTRONICS CO LTD20 citations92
US5751540AMay 12, 1998
Ferroelectric capacitor with rhodium electrodes
SAMSUNG ELECTRONICS CO LTD38 citations90
US7767502B2Aug 3, 2010
Method for manufacturing electronic device using thin film transistor with protective cap over flexible substrate
SAMSUNG ELECTRONICS CO LTD8 citations84
US6992923B2Jan 31, 2006
Single transistor type magnetic random access memory device and method of operating and manufacturing the same
SAMSUNG ELECTRONICS CO LTD12 citations83
US7176488B2Feb 13, 2007
Thin film transistor with protective cap over flexible substrate, electronic device using the same, and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD9 citations74
US6919597B2Jul 19, 2005
Bismuth titanium silicon oxide, bismuth titanium silicon oxide thin film, and method for forming the thin film
SAMSUNG ELECTRONICS CO LTD7 citations73
US6891241B2May 10, 2005
Single transistor type magnetic random access memory device and method of operating and manufacturing the same
SAMSUNG ELECTRONICS CO LTD7 citations73
US6391119B1May 21, 2002
Method for cleaning PZT thin film
SAMSUNG ELECTRONICS CO LTD7 citations68
US7374994B2May 20, 2008
Bismuth titanium silicon oxide, bismuth titanium silicon oxide thin film, and method for forming the thin film
SAMSUNG ELECTRONICS CO LTD2 citations62
US6593149B2Jul 15, 2003
Manufacturing method for ferroelectric thin film using sol-gel process
SAMSUNG ELECTRONICS CO LTD2 citations62
US7002193B2Feb 21, 2006
Ferroelectric capacitor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US7560042B2Jul 14, 2009
Ferroelectric thin film and device including the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US7238388B2Jul 3, 2007
Ferroelectric thin film and method for forming the same
SAMSUNG ELECTRONICS CO LTD0 citations51