P

Inventor

YUDA KATSUHISA

JP21 patents
⚠️ This page may combine multiple inventors who share the name “YUDA KATSUHISA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NEC CORP

17 patents
US6851384B2Feb 8, 2005

Remote plasma apparatus for processing substrate with two types of gases

NEC CORP73 citations98
US6663715B1Dec 16, 2003

Plasma CVD apparatus for large area CVD film

NEC CORP255 citations98
US6383299B1May 7, 2002

Silicon oxide film, method of forming the silicon oxide film, and apparatus for depositing the silicon oxide film

NEC CORP41 citations96
US5998838ADec 7, 1999

Thin film transistor

NEC CORP77 citations96
US6703267B2Mar 9, 2004

Method of manufacturing thin film transistor

NEC CORP33 citations93
US6444508B1Sep 3, 2002

Method of manufacturing thin film transistor

NEC CORP16 citations93
US6258638B1Jul 10, 2001

Method of manufacturing thin film transistor

NEC CORP32 citations93
US7709063B2May 4, 2010

Remote plasma apparatus for processing substrate with two types of gases

NEC CORP24 citations92
US6830786B2Dec 14, 2004

Silicon oxide film, method of forming the silicon oxide film, and apparatus for depositing the silicon oxide film

NEC CORP19 citations92
US6822263B2Nov 23, 2004

Thin film transistor formed on a transparent substrate

NEC CORP24 citations91
US7392759B2Jul 1, 2008

Remote plasma apparatus for processing substrate with two types of gases

NEC CORP9 citations84
US6444327B1Sep 3, 2002

Silicon oxide film, method of forming the silicon oxide film, and apparatus for depositing the silicon oxide film

NEC CORP11 citations74
US6281053B1Aug 28, 2001

Thin film transistor with reduced hydrogen passivation process time

NEC CORP6 citations74
US6118139ASep 12, 2000

Thin film transistor with reduced hydrogen passivation process time

NEC CORP6 citations74
US6779483B2Aug 24, 2004

Plasma CVD apparatus for large area CVD film

NEC CORP9 citations73
US7119363B2Oct 10, 2006

Thin film transistor formed on a transparent substrate

NEC CORP2 citations61
US7585708B2Sep 8, 2009

Method for manufacturing a thin-film transistor

NEC CORP0 citations50

ANELVA CORP

3 patents

CANON ANELVA CORP

1 patent