Inventor
HUR SUNG-HOI
KR38 patents
⚠️ This page may combine multiple inventors who share the name “HUR SUNG-HOI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
30 patentsUS6376876B1Apr 23, 2002
NAND-type flash memory devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD291 citations98
US6677200B2Jan 13, 2004
Method of forming non-volatile memory having floating trap type device
SAMSUNG ELECTRONICS CO LTD51 citations93
US6867453B2Mar 15, 2005
Memory device and fabrication method thereof
SAMSUNG ELECTRONICS CO LTD28 citations92
US6797570B2Sep 28, 2004
NAND-type flash memory devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD19 citations92
US6559029B2May 6, 2003
Method of fabricating semiconductor device having trench isolation structure
SAMSUNG ELECTRONICS CO LTD31 citations92
US6936885B2Aug 30, 2005
NAND-type flash memory devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD29 citations91
US8952438B2Feb 10, 2015
Three-dimensional microelectronic devices including horizontal and vertical patterns
SAMSUNG ELECTRONICS CO LTD6 citations84
US7585710B2Sep 8, 2009
Methods of forming electronic devices having partially elevated source/drain structures
SAMSUNG ELECTRONICS CO LTD10 citations84
US7315055B2Jan 1, 2008
Silicon-oxide-nitride-oxide-silicon (SONOS) memory devices having recessed channels
SAMSUNG ELECTRONICS CO LTD18 citations84
US7259421B2Aug 21, 2007
Non-volatile memory devices having trenches
SAMSUNG ELECTRONICS CO LTD11 citations84
US6677639B2Jan 13, 2004
Non-volatile memory device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD15 citations84
US7391071B2Jun 24, 2008
Nonvolatile memory devices with trenched side-wall transistors and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD16 citations83
US9425208B2Aug 23, 2016
Vertical memory devices
SAMSUNG ELECTRONICS CO LTD17 citations79
US7223659B2May 29, 2007
Memory device and fabrication method thereof
SAMSUNG ELECTRONICS CO LTD6 citations74
US6903406B2Jun 7, 2005
Cells of nonvolatile memory device with high inter-layer dielectric constant
SAMSUNG ELECTRONICS CO LTD10 citations74
US7871921B2Jan 18, 2011
Methods of forming interconnection structures for semiconductor devices
SAMSUNG ELECTRONICS CO LTD3 citations63
US7592665B2Sep 22, 2009
Non-volatile memory devices having floating gates
SAMSUNG ELECTRONICS CO LTD5 citations63
US7538385B2May 26, 2009
Memory device and fabrication method thereof
SAMSUNG ELECTRONICS CO LTD3 citations63
US7501322B2Mar 10, 2009
Methods of forming non-volatile memory devices having trenches
SAMSUNG ELECTRONICS CO LTD2 citations63
US7449763B2Nov 11, 2008
Method of fabricating cell of nonvolatile memory device with floating gate
SAMSUNG ELECTRONICS CO LTD1 citations63
US7122426B2Oct 17, 2006
Method of fabricating cell of nonvolatile memory device with floating gate
SAMSUNG ELECTRONICS CO LTD2 citations63
US6818510B2Nov 16, 2004
Non-volatile memory device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US6583478B2Jun 24, 2003
Transfer circuit of semiconductor device and structure thereof
SAMSUNG ELECTRONICS CO LTD2 citations63
US7285815B2Oct 23, 2007
EEPROM device having selecting transistors and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US7018894B2Mar 28, 2006
EEPROM device having selecting transistors and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD5 citations62
US7608507B2Oct 27, 2009
NAND flash memory devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations60
US7411239B2Aug 12, 2008
Nand flash memory devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations60
US7696556B2Apr 13, 2010
Nonvolatile memory devices including high-voltage MOS transistors with floated drain-side auxiliary gates and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD4 citations59
US7977730B2Jul 12, 2011
Memory device and fabrication method thereof
SAMSUNG ELECTRONICS CO LTD0 citations52
US8951881B2Feb 10, 2015
Methods of fabricating nonvolatile memory devices including voids between active regions and related devices
SAMSUNG ELECTRONICS CO LTD0 citations49