P

Inventor

HUR SUNG-HOI

KR38 patents
⚠️ This page may combine multiple inventors who share the name “HUR SUNG-HOI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

30 patents
US6376876B1Apr 23, 2002

NAND-type flash memory devices and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD291 citations98
US6677200B2Jan 13, 2004

Method of forming non-volatile memory having floating trap type device

SAMSUNG ELECTRONICS CO LTD51 citations93
US6867453B2Mar 15, 2005

Memory device and fabrication method thereof

SAMSUNG ELECTRONICS CO LTD28 citations92
US6797570B2Sep 28, 2004

NAND-type flash memory devices and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD19 citations92
US6559029B2May 6, 2003

Method of fabricating semiconductor device having trench isolation structure

SAMSUNG ELECTRONICS CO LTD31 citations92
US6936885B2Aug 30, 2005

NAND-type flash memory devices and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD29 citations91
US8952438B2Feb 10, 2015

Three-dimensional microelectronic devices including horizontal and vertical patterns

SAMSUNG ELECTRONICS CO LTD6 citations84
US7585710B2Sep 8, 2009

Methods of forming electronic devices having partially elevated source/drain structures

SAMSUNG ELECTRONICS CO LTD10 citations84
US7315055B2Jan 1, 2008

Silicon-oxide-nitride-oxide-silicon (SONOS) memory devices having recessed channels

SAMSUNG ELECTRONICS CO LTD18 citations84
US7259421B2Aug 21, 2007

Non-volatile memory devices having trenches

SAMSUNG ELECTRONICS CO LTD11 citations84
US6677639B2Jan 13, 2004

Non-volatile memory device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD15 citations84
US7391071B2Jun 24, 2008

Nonvolatile memory devices with trenched side-wall transistors and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD16 citations83
US9425208B2Aug 23, 2016

Vertical memory devices

SAMSUNG ELECTRONICS CO LTD17 citations79
US7223659B2May 29, 2007

Memory device and fabrication method thereof

SAMSUNG ELECTRONICS CO LTD6 citations74
US6903406B2Jun 7, 2005

Cells of nonvolatile memory device with high inter-layer dielectric constant

SAMSUNG ELECTRONICS CO LTD10 citations74
US7871921B2Jan 18, 2011

Methods of forming interconnection structures for semiconductor devices

SAMSUNG ELECTRONICS CO LTD3 citations63
US7592665B2Sep 22, 2009

Non-volatile memory devices having floating gates

SAMSUNG ELECTRONICS CO LTD5 citations63
US7538385B2May 26, 2009

Memory device and fabrication method thereof

SAMSUNG ELECTRONICS CO LTD3 citations63
US7501322B2Mar 10, 2009

Methods of forming non-volatile memory devices having trenches

SAMSUNG ELECTRONICS CO LTD2 citations63
US7449763B2Nov 11, 2008

Method of fabricating cell of nonvolatile memory device with floating gate

SAMSUNG ELECTRONICS CO LTD1 citations63
US7122426B2Oct 17, 2006

Method of fabricating cell of nonvolatile memory device with floating gate

SAMSUNG ELECTRONICS CO LTD2 citations63
US6818510B2Nov 16, 2004

Non-volatile memory device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD2 citations63
US6583478B2Jun 24, 2003

Transfer circuit of semiconductor device and structure thereof

SAMSUNG ELECTRONICS CO LTD2 citations63
US7285815B2Oct 23, 2007

EEPROM device having selecting transistors and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD2 citations62
US7018894B2Mar 28, 2006

EEPROM device having selecting transistors and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD5 citations62
US7608507B2Oct 27, 2009

NAND flash memory devices and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD2 citations60
US7411239B2Aug 12, 2008

Nand flash memory devices and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD3 citations60
US7696556B2Apr 13, 2010

Nonvolatile memory devices including high-voltage MOS transistors with floated drain-side auxiliary gates and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD4 citations59
US7977730B2Jul 12, 2011

Memory device and fabrication method thereof

SAMSUNG ELECTRONICS CO LTD0 citations52
US8951881B2Feb 10, 2015

Methods of fabricating nonvolatile memory devices including voids between active regions and related devices

SAMSUNG ELECTRONICS CO LTD0 citations49

SHIM SUN-IL

2 patents

KOREA ADVANCED INST SCI & TECH

2 patents

CHOI DONG-UK

1 patent

LIM JOON SUNG

1 patent

CHO BYUNG-KYU

1 patent

LEE DONG-SIK

1 patent