Inventor
CHO EUN-SUK
KR24 patents
⚠️ This page may combine multiple inventors who share the name “CHO EUN-SUK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
12 patentsUS7473611B2Jan 6, 2009
Methods of forming non-volatile memory cells including fin structures
SAMSUNG ELECTRONICS CO LTD257 citations99
US7177192B2Feb 13, 2007
Method of operating a flash memory device
SAMSUNG ELECTRONICS CO LTD37 citations92
US7419859B2Sep 2, 2008
Method of fabricating a semiconductor device having a single gate electrode corresponding to a pair of fin-type channel regions
SAMSUNG ELECTRONICS CO LTD13 citations84
US7371638B2May 13, 2008
Nonvolatile memory cells having high control gate coupling ratios using grooved floating gates and methods of forming same
SAMSUNG ELECTRONICS CO LTD10 citations84
US7315055B2Jan 1, 2008
Silicon-oxide-nitride-oxide-silicon (SONOS) memory devices having recessed channels
SAMSUNG ELECTRONICS CO LTD18 citations84
US7227220B2Jun 5, 2007
Semiconductor devices having buried bit lines and methods of manufacturing semiconductor devices having buried bit lines
SAMSUNG ELECTRONICS CO LTD11 citations84
US7547943B2Jun 16, 2009
Non-volatile memory devices that include a selection transistor having a recessed channel and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD15 citations83
US7807517B2Oct 5, 2010
Method of fabricating a semiconductor device having a single gate electrode corresponding to a pair of fin-type channel regions
SAMSUNG ELECTRONICS CO LTD7 citations74
US7602010B2Oct 13, 2009
Multi-bit multi-level non-volatile memory device and methods of operating and fabricating the same
SAMSUNG ELECTRONICS CO LTD7 citations74
US10324629B2Jun 18, 2019
Non-volatile memory device having page buffers with differing characteristics
SAMSUNG ELECTRONICS CO LTD4 citations70
US7737485B2Jun 15, 2010
Non-volatile memory cells including fin structures
SAMSUNG ELECTRONICS CO LTD4 citations63
US7432160B2Oct 7, 2008
Semiconductor devices including transistors having three dimensional channels and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD4 citations63
SAMSUNG SDI CO LTD
7 patentsUS7971606B2Jul 5, 2011
Fuel tank and cap device thereof
SAMSUNG SDI CO LTD4 citations62
US7799449B2Sep 21, 2010
Reformer having improved heat delivery and fuel cell system having the same
SAMSUNG SDI CO LTD3 citations62
US7887605B2Feb 15, 2011
Reformer for fuel cell
SAMSUNG SDI CO LTD0 citations52
US8053119B2Nov 8, 2011
Reformer and fuel cell system having the same
SAMSUNG SDI CO LTD1 citations51
US7846605B2Dec 7, 2010
Pump having noise-proof and vibration-proof structure and fuel cell system using the same
SAMSUNG SDI CO LTD0 citations51
US7678491B2Mar 16, 2010
Stack and fuel cell system using the same
SAMSUNG SDI CO LTD0 citations41
US7846609B2Dec 7, 2010
Module-type fuel cell system
SAMSUNG SDI CO LTD0 citations40