Inventor
SHATZ THOMAS E
US4 patents
Patents
4 patentsUS7672094B2Mar 2, 2010
TMR sensor having an under-layer treated with nitrogen for increased magnetoresistance
HITACHI GLOBAL STORAGE TECH7 citations71
US7333302B2Feb 19, 2008
GMR sensor having an under-layer treated with nitrogen for increased magnetoresistance
HITACHI GLOBAL STORAGE TECH4 citations71
US7251110B2Jul 31, 2007
GMR sensor having layers treated with nitrogen for increased magnetoresistance
HITACHI GLOBAL STORAGE TECH9 citations71
US7573685B2Aug 11, 2009
GMR sensor having a capping layer treated with nitrogen for increased magnetoresistance
HITACHI GLOBAL STORAGE TECH0 citations50