Inventor

YORK BRIAN R

US62 patents

⚠️ This page may combine multiple inventors who share the name “YORK BRIAN R”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YORK BRIAN R

WESTERN DIGITAL TECH INC

BiSbX (012) layers having increased operating temperatures for SOT and MRAM devices

SOT film stack for differential reader

Topological insulator based spin torque oscillator reader

BiSb topological insulator with seed layer or interlayer to prevent sb diffusion and promote BiSb (012) orientation

Bismuth antimony alloys for use as topological insulators

Magnetoresistive device comprising a synthetic antiferromagnetic coupling layer of RuAl having a (001) texture

Multilayer structures for magnetic recording devices to facilitate targeted magnetic switching and low coercivity

Magnetic sensor half-bridge based on inverse spin hall effect with reduced thermal drift

Buffer layers and interlayers that promote BiSbx (012) alloy orientation for sot and MRAM devices

Magnetoresistive devices comprising a synthetic antiferromagnetic coupling layer of RuAl having a (110) texture

Topological insulator based spin torque oscillator reader

Read sensor with ordered heusler alloy free layer and semiconductor barrier layer

Cobalt-boron (CoB) layer for magnetic recording devices, memory devices, and storage devices

BiSbX (012) layers having increased operating temperatures for SOT and MRAM devices

SOT film stack for differential reader

Seed layer for spin torque oscillator in microwave assisted magnetic recording device

Magnetic heads having low magnetic coercivity (Hc) and high saturated magnetic flux density (Bs) in ferromagnetic (FM) layer(s) or shield(s) with minimized saturation

BiSb topological insulator with seed layer or interlayer to prevent Sb diffusion and promote BiSb (012) orientation

Multilayer structures for magnetic recording devices to facilitate targeted magnetic switching and low coercivity

Highly textured 001 BiSb and materials for making same

Doping process to refine grain size for smoother BiSb film surface

Doped BiSb (012) or undoped BiSb (001) topological insulator with GeNiFe buffer layer and/or interlayer for SOT based sensor, memory, and storage devices

Tunneling magnetoresistive (TMR) device with improved seed layer

Buffer layers and interlayers that promote BiSbx (012) alloy orientation for SOT and MRAM devices

Nitrogen doped oxides for lower bandgap

Non-localized spin valve multi-free-layer reader hybridized with spin orbit torque layers

Non-localized spin valve reader hybridized with spin orbit torque layer

SOT reader with recessed SOT topological insulator material

Spin-orbit torque SOT reader with recessed spin hall effect layer

TDMR SOT read heads having recessed topological insulator materials

BiSb topological insulator with novel buffer layer that promotes a BiSb (012) orientation

Higher areal density non-local spin orbit torque (SOT) writer with topological insulator materials

HITACHI GLOBAL STORAGE TECH

Current-in-the-plane spin valve magnetoresistive sensor with dual metal oxide capping layers

Intermediate tri-layer structure for perpendicular recording media

TMR sensor having an under-layer treated with nitrogen for increased magnetoresistance

GMR sensor having an under-layer treated with nitrogen for increased magnetoresistance

GMR sensor having layers treated with nitrogen for increased magnetoresistance

Recording medium comprising laminated underlayer structures

Magnetoresistive sensor with antiferromagnetic exchange-coupled structure formed by use of chemical-ordering enhancement layer

MR sensor and thin film media having alloyed Ru antiparallel spacer layer for enhanced antiparallel exchange coupling

Magnetoresistive sensor with antiferromagnetic exchange-coupled structure having underlayer for enhancing chemical-ordering in the antiferromagnetic layer

CoCrPtB alloys with increased boron content and method of producing same

IBM

High magnetic moment Co-Fe-O-N films with soft magnetic properties

Method for creating write element having high magnetic moment Co-Fe-O-N film with soft magnetic properties

X RAY OPTICAL SYS INC

Radiation focusing monocapillary with constant inner dimension region and varying inner dimension region

LEE WEN-YAUNG

Magnetoresistive sensor with novel pinned layer structure

HGST Netherlands BV

Method for manufacturing a magnetic write pole with a consistent bevel angle

MARINERO ERNESTO E

Patterned perpendicular magnetic recording medium with multiple magnetic layers and interlayers

BRINKMAN ELIZABETH A

Substrate nitrogen plasma treatment for softer CoFe main pole writer formation

BRINKMAN ELIZABETH ANN

Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with multilayer reference layer including a Heusler alloy