Inventor
NGUYEN HAO THAI
US24 patents
⚠️ This page may combine multiple inventors who share the name “NGUYEN HAO THAI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SANDISK CORP
15 patentsUS7447079B2Nov 4, 2008
Method for sensing negative threshold voltages in non-volatile storage using current sensing
SANDISK CORP50 citations95
US7795952B2Sep 14, 2010
Regulation of recovery rates in charge pumps
SANDISK CORP60 citations94
US7978526B2Jul 12, 2011
Low noise sense amplifier array and method for nonvolatile memory
SANDISK CORP15 citations92
US7957197B2Jun 7, 2011
Nonvolatile memory with a current sense amplifier having a precharge circuit and a transfer gate coupled to a sense node
SANDISK CORP22 citations92
US7606076B2Oct 20, 2009
Sensing in non-volatile storage using pulldown to regulated source voltage to remove system noise
SANDISK CORP19 citations92
US7593265B2Sep 22, 2009
Low noise sense amplifier array and method for nonvolatile memory
SANDISK CORP29 citations92
US7471567B1Dec 30, 2008
Method for source bias all bit line sensing in non-volatile storage
SANDISK CORP26 citations92
US7751250B2Jul 6, 2010
Memory device with power noise minimization during sensing
SANDISK CORP8 citations84
US7751249B2Jul 6, 2010
Minimizing power noise during sensing in memory device
SANDISK CORP10 citations84
US7606071B2Oct 20, 2009
Compensating source voltage drop in non-volatile storage
SANDISK CORP15 citations84
US7545678B2Jun 9, 2009
Non-volatile storage with source bias all bit line sensing
SANDISK CORP12 citations84
US7532516B2May 12, 2009
Non-volatile storage with current sensing of negative threshold voltages
SANDISK CORP6 citations73
US7489554B2Feb 10, 2009
Method for current sensing with biasing of source and P-well in non-volatile storage
SANDISK CORP5 citations73
US7606072B2Oct 20, 2009
Non-volatile storage with compensation for source voltage drop
SANDISK CORP5 citations63
US7539060B2May 26, 2009
Non-volatile storage using current sensing with biasing of source and P-Well
SANDISK CORP1 citations62
NGUYEN HAO THAI
5 patentsUS8169831B2May 1, 2012
High speed sense amplifier array and method for non-volatile memory
NGUYEN HAO THAI8 citations83
US8811075B2Aug 19, 2014
Charge cycling by equalizing and regulating the source, well, and bit line levels during write operations for NAND flash memory: verify to program transition
NGUYEN HAO THAI1 citations61
US8737132B2May 27, 2014
Charge cycling by equalizing the source and bit line levels between pulses during no-verify write operations for NAND flash memory
NGUYEN HAO THAI2 citations61
US8300472B2Oct 30, 2012
Low noise sense amplifier array and method for nonvolatile memory
NGUYEN HAO THAI0 citations51
US8842471B2Sep 23, 2014
Charge cycling by equalizing and regulating the source, well, and bit line levels during write operations for NAND flash memory: program to verify transition
NGUYEN HAO THAI0 citations50
SANDISK TECHNOLOGIES INC
3 patentsUS8971141B2Mar 3, 2015
Compact high speed sense amplifier for non-volatile memory and hybrid lockout
SANDISK TECHNOLOGIES INC10 citations84
US9293195B2Mar 22, 2016
Compact high speed sense amplifier for non-volatile memory
SANDISK TECHNOLOGIES INC16 citations82
US8830745B2Sep 9, 2014
Memory system with unverified program step
SANDISK TECHNOLOGIES INC3 citations60