Inventor
CHENG YI-LUNG
TW26 patents
Patents
26 patentsUS6479098B1Nov 12, 2002
Method to solve particle performance of FSG layer by using UFU season film for FSG process
TAIWAN SEMICONDUCTOR MFG20 citations92
US7176571B2Feb 13, 2007
Nitride barrier layer to prevent metal (Cu) leakage issue in a dual damascene structure
TAIWAN SEMICONDUCTOR MFG19 citations91
US6660638B1Dec 9, 2003
CMP process leaving no residual oxide layer or slurry particles
TAIWAN SEMICONDUCTOR MFG13 citations91
US6584987B1Jul 1, 2003
Method for improved cleaning in HDP-CVD process with reduced NF3 usage
TAIWAN SEMICONDUCTOR MFG31 citations90
US6790778B1Sep 14, 2004
Method for capping over a copper layer
TAIWAN SEMICONDUCTOR MFG36 citations89
US6759347B1Jul 6, 2004
Method of forming in-situ SRO HDP-CVD barrier film
TAIWAN SEMICONDUCTOR MFG20 citations89
US6713407B1Mar 30, 2004
Method of forming a metal nitride layer over exposed copper
TAIWAN SEMICONDUCTOR MFG37 citations88
US7078336B2Jul 18, 2006
Method and system for fabricating a copper barrier layer with low dielectric constant and leakage current
TAIWAN SEMICONDUCTOR MFG18 citations84
US6815007B1Nov 9, 2004
Method to solve IMD-FSG particle and increase Cp yield by using a new tougher UFUN season film
TAIWAN SEMICONDUCTOR MFG14 citations83
US6802935B2Oct 12, 2004
Semiconductor chamber process apparatus and method
TAIWAN SEMICONDUCTOR MFG13 citations82
US6703317B1Mar 9, 2004
Method to neutralize charge imbalance following a wafer cleaning process
TAIWAN SEMICONDUCTOR MFG14 citations80
US7296532B2Nov 20, 2007
Bypass gas feed system and method to improve reactant gas flow and film deposition
TAIWAN SEMICONDUCTOR MFG18 citations78
US7208415B2Apr 24, 2007
Plasma treatment method for electromigration reduction
TAIWAN SEMICONDUCTOR MFG8 citations73
US7646207B2Jan 12, 2010
Method for measuring a property of interconnections and structure for the same
TAIWAN SEMICONDUCTOR MFG7 citations69
US7074701B2Jul 11, 2006
Method of forming a borderless contact opening featuring a composite tri-layer etch stop material
TAIWAN SEMICONDUCTOR MFG8 citations66
US7512924B2Mar 31, 2009
Semiconductor device structure and methods of manufacturing the same
TAIWAN SEMICONDUCTOR MFG2 citations63
US6815072B2Nov 9, 2004
Method to solve particle performance of FSG layer by using UFU season film for FSG process
TAIWAN SEMICONDUCTOR MFG2 citations62
US7157367B2Jan 2, 2007
Device structure having enhanced surface adhesion and failure mode analysis
TAIWAN SEMICONDUCTOR MFG2 citations61
US7125802B2Oct 24, 2006
CMP process leaving no residual oxide layer or slurry particles
TAIWAN SEMICONDUCTOR MFG3 citations61
US7420277B2Sep 2, 2008
System for heat dissipation in semiconductor devices
TAIWAN SEMICONDUCTOR MFG2 citations59
US6602560B2Aug 5, 2003
Method for removing residual fluorine in HDP-CVD chamber
TAIWAN SEMICONDUCTOR MFG2 citations58
US7449911B2Nov 11, 2008
Method for determining electro-migration failure mode
TAIWAN SEMICONDUCTOR MFG4 citations54
US6979656B2Dec 27, 2005
Carbon and halogen doped silicate glass dielectric layer and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG0 citations52
US7253121B2Aug 7, 2007
Method for forming IMD films
TAIWAN SEMICONDUCTOR MFG0 citations51
US6903019B2Jun 7, 2005
CMP process leaving no residual oxide layer or slurry particles
TAIWAN SEMICONDUCTOR MFG0 citations51
US7470584B2Dec 30, 2008
TEOS deposition method
TAIWAN SEMICONDUCTOR MFG0 citations45